onsemi FET, MOSFET Arrays MMDF2N02ER2G

Description
Mosfet Array 2 N-Channel (Dual) 25V 3.6A 2W Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 25V 3.6A 2W Surface Mount 8-SOIC
Request a Quote Datasheet

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Product
Description
Supplier Links
FET, MOSFET Arrays - MMDF2N02ER2GOS-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
MMDF2N02ER2GOS-ND
FET, MOSFET Arrays MMDF2N02ER2GOS-ND
Mosfet Array 2 N-Channel (Dual) 25V 3.6A 2W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 25V 3.6A 2W Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF2N02ER2G - 1078375-MMDF2N02ER2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF2N02ER2G
1078375-MMDF2N02ER2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF2N02ER2G 1078375-MMDF2N02ER2G
Manufacturer: ON Semiconductor Win Source Part Number: 1078375-MMDF2N02ER2G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 3.6A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 532pF @ 16V Maximum Rds On at Id,Vgs: 100 mOhm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1078375-MMDF2N02ER2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 3.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 532pF @ 16V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MMDF2N02ER2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MMDF2N02ER2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MMDF2N02ER2G
MOSFET 2N-CH 25V 3.6A 8SOIC

MOSFET 2N-CH 25V 3.6A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MMDF2N02ER2GOS-ND 1078375-MMDF2N02ER2G MMDF2N02ER2G
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF2N02ER2G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SOIC
Polarity N-Channel
V(BR)DSS 25 volts
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