Power MOSFET 25V 3.6A 100 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL Product overview: MMDF2N02ER2 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 25V, 3.6A, 100 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 25V, 3.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-MMDF2N02ER2 can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 119846-MMDF2N02ER2
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 3.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 532pF @ 16V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2.2A, 10V
Mosfet Array 2 N-Channel (Dual) 25V 3.6A 2W Surface Mount 8-SOIC
MOSFET 2N-CH 25V 3.6A 8SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 289-MMDF2N02ER2 | 119846-MMDF2N02ER2 | MMDF2N02ER2OS-ND | MMDF2N02ER2 |
| Product Name | N-Channel Dual 25V 3.6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF2N02ER2 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| PD | 2000 milliwatts | 2000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |