onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF2C03HDR2 MMDF2C03HDR2

Manufacturer: ON Semiconductor
Win Source Part Number: 131520-MMDF2C03HDR2
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.1A, 3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 630pF @ 24V
Maximum Rds On at Id,Vgs: 70 mOhm @ 3A, 10V

Mosfet Array N and P-Channel 30V 4.1A, 3A 2W Surface Mount 8-SOIC

4.1A, 30V, 0.07ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SO-8 Product overview: MMDF2C03HDR2 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 4.1A, 30V, 0.07ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 4.1A, 30V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-MMDF2C03HDR2 can be used for catalog matching and distributor lookup.