onsemi TRANSISTORS - RF Transistors (BJT) - MMBTH10 MMBTH10

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 023805-MMBTH10 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 650MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 25V Typical Gain (hFE) (Min): 60 @ 4mA, 10V Maximum Power Dissipation: 225mW
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 023805-MMBTH10 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 650MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 25V Typical Gain (hFE) (Min): 60 @ 4mA, 10V Maximum Power Dissipation: 225mW
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - MMBTH10 - 023805-MMBTH10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - MMBTH10
023805-MMBTH10
TRANSISTORS - RF Transistors (BJT) - MMBTH10 023805-MMBTH10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 023805-MMBTH10 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 650MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 25V Typical Gain (hFE) (Min): 60 @ 4mA, 10V Maximum Power Dissipation: 225mW

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 023805-MMBTH10
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 650MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 25V
Typical Gain (hFE) (Min): 60 @ 4mA, 10V
Maximum Power Dissipation: 225mW

Buy Now Datasheet
Singapore
Bipolar Transistor
283-MMBTH10
Bipolar Transistor 283-MMBTH10
MMBTH10 - RF SMALL SIGNAL BIPOLA Product overview: MMBTH10 from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MMBTH10 can be used for catalog matching and distributor lookup.

MMBTH10 - RF SMALL SIGNAL BIPOLA Product overview: MMBTH10 from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MMBTH10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - MMBTH10FSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
MMBTH10FSTR-ND
Bipolar RF Transistors MMBTH10FSTR-ND
RF Transistor NPN 25V 50mA 650MHz 225mW Surface Mount SOT-23-3

RF Transistor NPN 25V 50mA 650MHz 225mW Surface Mount SOT-23-3

Buy Now Datasheet
Bipolar RF Transistors - MMBTH10 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MMBTH10
Bipolar RF Transistors MMBTH10
MMBTH10 - RF SMALL SIGNAL BIPOLA

MMBTH10 - RF SMALL SIGNAL BIPOLA

Supplier's Site Datasheet
TRANSISTOR RF NPN SOT-23 - 598-MMBTH10 - Utmel Electronic Limited
Hong Kong, China
TRANSISTOR RF NPN SOT-23
598-MMBTH10
TRANSISTOR RF NPN SOT-23 598-MMBTH10
TRANSISTOR RF NPN SOT-23

TRANSISTOR RF NPN SOT-23

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Utmel Electronic Limited
Product Category RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors RF Transistors
Product Number 023805-MMBTH10 283-MMBTH10 MMBTH10FSTR-ND MMBTH10 598-MMBTH10
Product Name TRANSISTORS - RF Transistors (BJT) - MMBTH10 Bipolar Transistor Bipolar RF Transistors Bipolar RF Transistors TRANSISTOR RF NPN SOT-23
Polarity NPN; NPN NPN NPN; NPN NPN; NPN
Package Type SOT3; SOT23; SOT-23-3 (TO-236) Bulk SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Reel - TR Bulk Tape Reel; Tape & Reel (TR)
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Power Gain 60 dB
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