onsemi Single Bipolar Transistors MMBTA64

Description
TRANS PNP DARL 30V 1.2A SOT23-3
Request a Quote Datasheet
Description
TRANS PNP DARL 30V 1.2A SOT23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MMBTA64 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MMBTA64
Single Bipolar Transistors MMBTA64
TRANS PNP DARL 30V 1.2A SOT23-3

TRANS PNP DARL 30V 1.2A SOT23-3

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - MMBTA64 - 059168-MMBTA64 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBTA64
059168-MMBTA64
TRANSISTORS - Transistors (BJT) - Single - MMBTA64 059168-MMBTA64
Manufacturer: ON Semiconductor Win Source Part Number: 059168-MMBTA64 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 125MHz Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 1.5V @ 100μA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 20000 @ 100mA, 5V Maximum Power Dissipation: 225mW

Manufacturer: ON Semiconductor
Win Source Part Number: 059168-MMBTA64
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 125MHz
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 1.5V @ 100μA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 20000 @ 100mA, 5V
Maximum Power Dissipation: 225mW

Buy Now Datasheet
Single Bipolar Transistors - MMBTA64FSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBTA64FSTR-ND
Single Bipolar Transistors MMBTA64FSTR-ND
Bipolar (BJT) Transistor PNP - Darlington 30V 1.2A 125MHz 350mW Surface Mount SOT-23-3

Bipolar (BJT) Transistor PNP - Darlington 30V 1.2A 125MHz 350mW Surface Mount SOT-23-3

Buy Now Datasheet
Bipolar Transistor, Pnp, -30V; Transistor Polarity Onsemi - 58K1880 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Pnp, -30V; Transistor Polarity Onsemi
58K1880
Bipolar Transistor, Pnp, -30V; Transistor Polarity Onsemi 58K1880
BIPOLAR TRANSISTOR, PNP, -30V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:1.2A; Power Dissipation Pd:350mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; DC Current Gain hFE:10000hFERoHS Compliant: Yes

BIPOLAR TRANSISTOR, PNP, -30V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:1.2A; Power Dissipation Pd:350mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; DC Current Gain hFE:10000hFERoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number MMBTA64 059168-MMBTA64 MMBTA64FSTR-ND 58K1880
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MMBTA64 Single Bipolar Transistors Bipolar Transistor, Pnp, -30V; Transistor Polarity Onsemi
Polarity PNP - Darlington; PNP PNP; PNP - Darlington PNP PNP
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 TO-3
IC(max) 1200 milliamps 1200 milliamps
VCEO 30 volts
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