TRANS PNP DARL 30V 0.5A SOT23-3
Bipolar (BJT) Transistor PNP - Darlington 30V 500mA 125MHz 225mW Surface Mount SOT-23-3 (TO-236)
Bipolar (BJT) Transistor PNP - Darlington 30V 500mA 125MHz 225mW Surface Mount SOT-23-3 (TO-236)
Bipolar (BJT) Transistor PNP - Darlington 30V 500mA 125MHz 225mW Surface Mount SOT-23-3 (TO-236)
PNP BJT Transistor 30V 0.5A 225mW SOT-23 Product overview: MMBTA63LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.5A, 225mW, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 0.5A, 225mW, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBTA63LT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 114079-MMBTA63LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 125MHz
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 1.5V @ 100μA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 10000 @ 100mA, 5V
Maximum Power Dissipation: 225mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
TRANS PNP DARL 30V 0.5A SOT23-3
Darlington Transistors 500mA 30V PNP
BIPOLAR TRANSISTOR, PNP, -30V; Transistor Polarity:PNP; Collector Emitter Voltage Max:30V; Continuous Collector Current:500mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:125MHzRoHS
TRANSISTOR, PNP, -30V, -0.5A, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:30V; Continuous Collector Current:500mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Darlington Transistors | Bipolar RF Transistors | Transistors |
| Product Number | MMBTA63LT1G | MMBTA63LT1GOSCT-ND | 276-MMBTA63LT1G | 114079-MMBTA63LT1G | MMBTA63LT1G | MMBTA63LT1G | 84K8794 | 26K4538 |
| Product Name | Single Bipolar Transistors | Single Bipolar Transistors | 30V 0.5A 225mW SOT-23 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - MMBTA63LT1G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Darlington Transistors | Bipolar Transistor, Pnp, -30V; Transistor Polarity Onsemi | Transistor, Pnp, -30V, -0.5A, Sot-23-3; Transistor Polarity Onsemi |
| Polarity | PNP - Darlington; PNP | PNP | PNP | PNP; PNP - Darlington | PNP | PNP | ||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | TO-3 | TO-3; SOT23 | |||
| IC(max) | 500 milliamps | 500 milliamps | 500 milliamps | 500 milliamps | ||||
| VCEO | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| Operating Frequency | 125 MHz | 125 MHz |
