onsemi Single Bipolar Transistors MMBTA55LT3

Description
Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 225mW Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 225mW Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MMBTA55LT3-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBTA55LT3-ND
Single Bipolar Transistors MMBTA55LT3-ND
Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 225mW Surface Mount SOT-23-3 (TO-236)

Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 225mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
 - MMBTA55LT3 - Rochester Electronics
Newburyport, MA, United States
PNP Bipolar Transistor

PNP Bipolar Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - MMBTA55LT3 - 208624-MMBTA55LT3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBTA55LT3
208624-MMBTA55LT3
TRANSISTORS - Transistors (BJT) - Single - MMBTA55LT3 208624-MMBTA55LT3
Manufacturer: ON Semiconductor Win Source Part Number: 208624-MMBTA55LT3 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 50MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 250mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 100 @ 100mA, 1V Maximum Power Dissipation: 225mW

Manufacturer: ON Semiconductor
Win Source Part Number: 208624-MMBTA55LT3
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 50MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 250mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 100 @ 100mA, 1V
Maximum Power Dissipation: 225mW

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBTA55LT3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMBTA55LT3
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMBTA55LT3
TRANS PNP 60V 0.5A SOT23-3

TRANS PNP 60V 0.5A SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number MMBTA55LT3-ND MMBTA55LT3 208624-MMBTA55LT3 MMBTA55LT3
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MMBTA55LT3 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP
Unlock Full Specs
to access all available technical data