onsemi Darlington Npn, 300 Ma, 30 V, Full Reel; Transistor Polarity Onsemi MMBTA13LT1G.

The MMBTA13LT1G is an NPN silicon Darlington transistor in a SOT-23 package, designed for general-purpose amplification. It has a collector-emitter voltage rating of 30 Vdc, a continuous collector current of 300 mAdc, and a total device dissipation of 225 mW on FR-5 board at 25°C. The thermal resistance junction-to-ambient is 556 °C/W. The device is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified. Its DC current gain is minimum 5,000 at 10 mA and 10,000 at 100 mA collector current, with a collector-emitter saturation voltage of 1.5 V max at 100 mA. The junction and storage temperature range is -55°C to +150°C.