onsemi Single Bipolar Transistors MMBTA13

Description
Bipolar (BJT) Transistor NPN - Darlington 30V 1.2A 125MHz 350mW Surface Mount SOT-23-3
  • Single Bipolar Transistors - MMBTA13FSTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MMBTA13 - 059164-MMBTA13 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBTA13 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN - Darlington 30V 1.2A 125MHz 350mW Surface Mount SOT-23-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - MMBTA13FSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBTA13FSTR-ND
Single Bipolar Transistors MMBTA13FSTR-ND
Bipolar (BJT) Transistor NPN - Darlington 30V 1.2A 125MHz 350mW Surface Mount SOT-23-3

Bipolar (BJT) Transistor NPN - Darlington 30V 1.2A 125MHz 350mW Surface Mount SOT-23-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MMBTA13 - 059164-MMBTA13 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBTA13
059164-MMBTA13
TRANSISTORS - Transistors (BJT) - Single - MMBTA13 059164-MMBTA13
Manufacturer: ON Semiconductor Win Source Part Number: 059164-MMBTA13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 125MHz Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 300mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 1.5V @ 100μA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 10000 @ 100mA, 5V Maximum Power Dissipation: 225mW

Manufacturer: ON Semiconductor
Win Source Part Number: 059164-MMBTA13
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 125MHz
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 300mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 1.5V @ 100μA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 10000 @ 100mA, 5V
Maximum Power Dissipation: 225mW

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBTA13 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMBTA13
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMBTA13
TRANS NPN DARL 30V 1.2A SOT23-3

TRANS NPN DARL 30V 1.2A SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number MMBTA13FSTR-ND 059164-MMBTA13 MMBTA13
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MMBTA13 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Darlington
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