onsemi 350V 200MHz 500mA SOT-23 Bipolar Transistor MMBT6517LT1G

Description
350V NPN BJT Transistor, 200MHz, 500mA, SOT-23 Product overview: MMBT6517LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 200MHz, 500mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 350V, 200MHz, 500mA, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT6517LT1G can be used for catalog matching and distributor lookup.
  • TRANSISTORS - Transistors (BJT) - Single - MMBT6517LT1G - 023784-MMBT6517LT1G - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - MMBT6517LT1GOSTR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - MMBT6517LT1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBT6517LT1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor, Npn, 350V, 0.1A, Sot-23; Transistor Polarity Onsemi - 45J1537 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Transistor, Npn, 350V, 0.1A, Sot-23; Transistor Polarity Onsemi - 29X6106 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
350V NPN BJT Transistor, 200MHz, 500mA, SOT-23 Product overview: MMBT6517LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 200MHz, 500mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 350V, 200MHz, 500mA, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT6517LT1G can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
350V 200MHz 500mA SOT-23 Bipolar Transistor
276-MMBT6517LT1G
350V 200MHz 500mA SOT-23 Bipolar Transistor 276-MMBT6517LT1G
350V NPN BJT Transistor, 200MHz, 500mA, SOT-23 Product overview: MMBT6517LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 200MHz, 500mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 350V, 200MHz, 500mA, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT6517LT1G can be used for catalog matching and distributor lookup.

350V NPN BJT Transistor, 200MHz, 500mA, SOT-23 Product overview: MMBT6517LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 200MHz, 500mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 350V, 200MHz, 500mA, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT6517LT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - MMBT6517LT1G - 023784-MMBT6517LT1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBT6517LT1G
023784-MMBT6517LT1G
TRANSISTORS - Transistors (BJT) - Single - MMBT6517LT1G 023784-MMBT6517LT1G
Manufacturer: ON Semiconductor Win Source Part Number: 023784-MMBT6517LT1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 350V Max Vce (sat): 1V @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 20 @ 50mA, 10V Maximum Power Dissipation: 225mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 023784-MMBT6517LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 350V
Max Vce (sat): 1V @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 20 @ 50mA, 10V
Maximum Power Dissipation: 225mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single Bipolar Transistors - MMBT6517LT1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT6517LT1GOSTR-ND
Single Bipolar Transistors MMBT6517LT1GOSTR-ND
Bipolar (BJT) Transistor NPN 350V 100mA 200MHz 225mW Surface Mount SOT-23-3 (TO-236)

Bipolar (BJT) Transistor NPN 350V 100mA 200MHz 225mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single Bipolar Transistors - MMBT6517LT1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MMBT6517LT1G
Single Bipolar Transistors MMBT6517LT1G
TRANS NPN 350V 0.1A SOT23-3

TRANS NPN 350V 0.1A SOT23-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBT6517LT1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMBT6517LT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMBT6517LT1G
TRANS NPN 350V 0.1A SOT23-3

TRANS NPN 350V 0.1A SOT23-3

Supplier's Site
Transistor, Npn, 350V, 0.1A, Sot-23; Transistor Polarity Onsemi - 45J1537 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, 350V, 0.1A, Sot-23; Transistor Polarity Onsemi
45J1537
Transistor, Npn, 350V, 0.1A, Sot-23; Transistor Polarity Onsemi 45J1537
TRANSISTOR, NPN, 350V, 0.1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:350V; Continuous Collector Current:100mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

TRANSISTOR, NPN, 350V, 0.1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:350V; Continuous Collector Current:100mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor, Npn, 350V, 0.1A, Sot-23; Transistor Polarity Onsemi - 29X6106 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, 350V, 0.1A, Sot-23; Transistor Polarity Onsemi
29X6106
Transistor, Npn, 350V, 0.1A, Sot-23; Transistor Polarity Onsemi 29X6106
TRANSISTOR, NPN, 350V, 0.1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:350V; Continuous Collector Current:100mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

TRANSISTOR, NPN, 350V, 0.1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:350V; Continuous Collector Current:100mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 276-MMBT6517LT1G 023784-MMBT6517LT1G MMBT6517LT1GOSTR-ND MMBT6517LT1G MMBT6517LT1G 45J1537
Product Name 350V 200MHz 500mA SOT-23 Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - MMBT6517LT1G Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor, Npn, 350V, 0.1A, Sot-23; Transistor Polarity Onsemi
Polarity NPN NPN; NPN NPN NPN; NPN NPN
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 350 volts 350 volts 350 volts
VCBO 350 volts
fT 200 MHz
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