onsemi TRANSISTORS - Transistors (BJT) - Single - MMBT6427 MMBT6427

Description
Manufacturer: ON Semiconductor Win Source Part Number: 059159-MMBT6427 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Darlington Family Name: MMBT6427 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1.5V @ 500μA, 500mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 20000 @ 100mA, 5V Maximum Power Dissipation: 225mW Alternative Parts (Cross-Reference): SST6427T116; SST6427; BSS50 Lead Free; BSS50; Introduction Date: November 03, 1997 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial
  • TRANSISTORS - Transistors (BJT) - Single - MMBT6427 - 059159-MMBT6427 - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - MMBT6427FSTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBT6427 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 059159-MMBT6427 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Darlington Family Name: MMBT6427 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1.5V @ 500μA, 500mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 20000 @ 100mA, 5V Maximum Power Dissipation: 225mW Alternative Parts (Cross-Reference): SST6427T116; SST6427; BSS50 Lead Free; BSS50; Introduction Date: November 03, 1997 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MMBT6427 - 059159-MMBT6427 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBT6427
059159-MMBT6427
TRANSISTORS - Transistors (BJT) - Single - MMBT6427 059159-MMBT6427
Manufacturer: ON Semiconductor Win Source Part Number: 059159-MMBT6427 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Darlington Family Name: MMBT6427 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1.5V @ 500μA, 500mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 20000 @ 100mA, 5V Maximum Power Dissipation: 225mW Alternative Parts (Cross-Reference): SST6427T116; SST6427; BSS50 Lead Free; BSS50; Introduction Date: November 03, 1997 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 059159-MMBT6427
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Darlington
Family Name: MMBT6427
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 1.5V @ 500μA, 500mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 20000 @ 100mA, 5V
Maximum Power Dissipation: 225mW
Alternative Parts (Cross-Reference): SST6427T116; SST6427; BSS50 Lead Free; BSS50;
Introduction Date: November 03, 1997
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Single Bipolar Transistors - MMBT6427FSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT6427FSTR-ND
Single Bipolar Transistors MMBT6427FSTR-ND
Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A 350mW Surface Mount SOT-23-3

Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A 350mW Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBT6427 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMBT6427
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMBT6427
TRANS NPN DARL 40V 1.2A SOT23-3

TRANS NPN DARL 40V 1.2A SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Darlington Transistors Transistors Bipolar RF Transistors
Product Number 059159-MMBT6427 MMBT6427FSTR-ND MMBT6427
Product Name TRANSISTORS - Transistors (BJT) - Single - MMBT6427 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Darlington NPN
VCEO 40 volts 40 volts
IC(max) 500 milliamps 1200 milliamps
PD 225 milliwatts
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