onsemi Single Bipolar Transistors MMBT589LT1G

Description
Bipolar (BJT) Transistor PNP 30V 1A 100MHz 310mW Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 30V 1A 100MHz 310mW Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MMBT589LT1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT589LT1GOSCT-ND
Single Bipolar Transistors MMBT589LT1GOSCT-ND
Bipolar (BJT) Transistor PNP 30V 1A 100MHz 310mW Surface Mount SOT-23-3 (TO-236)

Bipolar (BJT) Transistor PNP 30V 1A 100MHz 310mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single Bipolar Transistors - MMBT589LT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT589LT1GOSTR-ND
Single Bipolar Transistors MMBT589LT1GOSTR-ND
Bipolar (BJT) Transistor PNP 30V 1A 100MHz 310mW Surface Mount SOT-23-3 (TO-236)

Bipolar (BJT) Transistor PNP 30V 1A 100MHz 310mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single Bipolar Transistors - MMBT589LT1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT589LT1GOSDKR-ND
Single Bipolar Transistors MMBT589LT1GOSDKR-ND
Bipolar (BJT) Transistor PNP 30V 1A 100MHz 310mW Surface Mount SOT-23-3 (TO-236)

Bipolar (BJT) Transistor PNP 30V 1A 100MHz 310mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MMBT589LT1G - 023780-MMBT589LT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBT589LT1G
023780-MMBT589LT1G
TRANSISTORS - Transistors (BJT) - Single - MMBT589LT1G 023780-MMBT589LT1G
Manufacturer: ON Semiconductor Win Source Part Number: 023780-MMBT589LT1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 650mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 100 @ 500mA, 2V Maximum Power Dissipation: 310mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 023780-MMBT589LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 650mV @ 200mA, 2A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 100 @ 500mA, 2V
Maximum Power Dissipation: 310mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore, Singapore
30V 1A 100MHz SOT-23 Bipolar Transistor
276-MMBT589LT1G
30V 1A 100MHz SOT-23 Bipolar Transistor 276-MMBT589LT1G
PNP BJT, 30V, 1A, 100MHz, SOT-23 Product overview: MMBT589LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1A, 100MHz, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 1A, 100MHz, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT589LT1G can be used for catalog matching and distributor lookup.

PNP BJT, 30V, 1A, 100MHz, SOT-23 Product overview: MMBT589LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1A, 100MHz, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 1A, 100MHz, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT589LT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar (Bjt) Single Transistor, Low Vce(Sat), Pnp, -30 V, 100 Mhz, 310 Mw, -1 A, 40 Rohs Compliant Onsemi - 52Y1072 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Low Vce(Sat), Pnp, -30 V, 100 Mhz, 310 Mw, -1 A, 40 Rohs Compliant Onsemi
52Y1072
Bipolar (Bjt) Single Transistor, Low Vce(Sat), Pnp, -30 V, 100 Mhz, 310 Mw, -1 A, 40 Rohs Compliant Onsemi 52Y1072
Bipolar (BJT) Single Transistor, Low VCE(Sat), PNP, -30 V, 100 MHz, 310 mW, -1 A, 40 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, Low VCE(Sat), PNP, -30 V, 100 MHz, 310 mW, -1 A, 40 RoHS Compliant: Yes

Supplier's Site Datasheet
Bipolar (Bjt) Single Transistor, Low Vce(Sat), Pnp, -30 V, 100 Mhz, 310 Mw, -1 A, 40 Rohs Compliant Onsemi - 31Y2784 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Low Vce(Sat), Pnp, -30 V, 100 Mhz, 310 Mw, -1 A, 40 Rohs Compliant Onsemi
31Y2784
Bipolar (Bjt) Single Transistor, Low Vce(Sat), Pnp, -30 V, 100 Mhz, 310 Mw, -1 A, 40 Rohs Compliant Onsemi 31Y2784
Bipolar (BJT) Single Transistor, Low VCE(Sat), PNP, -30 V, 100 MHz, 310 mW, -1 A, 40 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, Low VCE(Sat), PNP, -30 V, 100 MHz, 310 mW, -1 A, 40 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBT589LT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMBT589LT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMBT589LT1G
TRANS PNP 30V 1A SOT23-3

TRANS PNP 30V 1A SOT23-3

Supplier's Site
Single Bipolar Transistors - MMBT589LT1G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MMBT589LT1G
Single Bipolar Transistors MMBT589LT1G
TRANS PNP 30V 1A SOT23-3

TRANS PNP 30V 1A SOT23-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MMBT589LT1G
Bipolar Transistors - BJT MMBT589LT1G
Bipolar Transistors - BJT 2A 30V Switching PNP

Bipolar Transistors - BJT 2A 30V Switching PNP

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MMBT589LT1GOSCT-ND 023780-MMBT589LT1G 276-MMBT589LT1G 52Y1072 MMBT589LT1G MMBT589LT1G MMBT589LT1G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MMBT589LT1G 30V 1A 100MHz SOT-23 Bipolar Transistor Bipolar (Bjt) Single Transistor, Low Vce(Sat), Pnp, -30 V, 100 Mhz, 310 Mw, -1 A, 40 Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single Bipolar Transistors Bipolar Transistors - BJT
Polarity PNP PNP; PNP PNP PNP PNP; PNP
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) TO-3 SOT23; TO-236-3, SC-59, SOT-23-3
IC(max) 1000 milliamps 1000 milliamps 1000 milliamps
VCEO 30 volts 30 volts 30 volts
VCBO 50 volts
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