onsemi Single Bipolar Transistors MMBT5551LT1G

Description
TRANS NPN 160V 0.6A SOT23-3
Request a Quote Datasheet
Description
TRANS NPN 160V 0.6A SOT23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MMBT5551LT1G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MMBT5551LT1G
Single Bipolar Transistors MMBT5551LT1G
TRANS NPN 160V 0.6A SOT23-3

TRANS NPN 160V 0.6A SOT23-3

Supplier's Site Datasheet
Bipolar Transistors - 5450400 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
5450400
Bipolar Transistors 5450400
NPN transistor,MMBT5551 0.6A Ic 5Vce

NPN transistor,MMBT5551 0.6A Ic 5Vce

Supplier's Site
Bipolar Transistors - 5450400P - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
5450400P
Bipolar Transistors 5450400P
NPN transistor,MMBT5551 0.6A Ic 5Vce

NPN transistor,MMBT5551 0.6A Ic 5Vce

Supplier's Site
Bipolar Transistors - 1787579 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1787579
Bipolar Transistors 1787579
NPN transistor,MMBT5551 0.6A Ic 5Vce

NPN transistor,MMBT5551 0.6A Ic 5Vce

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single - MMBT5551LT1G - 023777-MMBT5551LT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBT5551LT1G
023777-MMBT5551LT1G
TRANSISTORS - Transistors (BJT) - Single - MMBT5551LT1G 023777-MMBT5551LT1G
Manufacturer: ON Semiconductor Win Source Part Number: 023777-MMBT5551LT1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN Family Name: MMBT5551L Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 225mW Alternative Parts (Cross-Reference): MMBT5551LG; MMBT5551LT3G; SMMBT5551LT1G; Introduction Date: February 02, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2023 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient Application Field: Used in Automotive, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 023777-MMBT5551LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN
Family Name: MMBT5551L
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 225mW
Alternative Parts (Cross-Reference): MMBT5551LG; MMBT5551LT3G; SMMBT5551LT1G;
Introduction Date: February 02, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Automotive, Industrial

Buy Now Datasheet
Singapore
160V 0.6A SOT-23 Bipolar Transistor
276-MMBT5551LT1G
160V 0.6A SOT-23 Bipolar Transistor 276-MMBT5551LT1G
NPN BJT Transistor 160V 0.6A SOT-23 Product overview: MMBT5551LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 0.6A, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 160V, 0.6A, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT5551LT1G can be used for catalog matching and distributor lookup.

NPN BJT Transistor 160V 0.6A SOT-23 Product overview: MMBT5551LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 0.6A, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 160V, 0.6A, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT5551LT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - MMBT5551LT1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT5551LT1GOSCT-ND
Single Bipolar Transistors MMBT5551LT1GOSCT-ND
Bipolar (BJT) Transistor NPN 160V 600mA 225mW Surface Mount SOT-23-3 (TO-236)

Bipolar (BJT) Transistor NPN 160V 600mA 225mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single Bipolar Transistors - MMBT5551LT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT5551LT1GOSTR-ND
Single Bipolar Transistors MMBT5551LT1GOSTR-ND
Bipolar (BJT) Transistor NPN 160V 600mA 225mW Surface Mount SOT-23-3 (TO-236)

Bipolar (BJT) Transistor NPN 160V 600mA 225mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single Bipolar Transistors - MMBT5551LT1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT5551LT1GOSDKR-ND
Single Bipolar Transistors MMBT5551LT1GOSDKR-ND
Bipolar (BJT) Transistor NPN 160V 600mA 225mW Surface Mount SOT-23-3 (TO-236)

Bipolar (BJT) Transistor NPN 160V 600mA 225mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
 - MMBT5551LT1G - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Supplier's Site Datasheet
Bjt, Npn, 160V, Sot-23, Full Reel; Transistor Polarity Onsemi - 03P0690 - Newark, An Avnet Company
Chicago, IL, United States
Bjt, Npn, 160V, Sot-23, Full Reel; Transistor Polarity Onsemi
03P0690
Bjt, Npn, 160V, Sot-23, Full Reel; Transistor Polarity Onsemi 03P0690
BJT, NPN, 160V, SOT-23, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:160V; Continuous Collector Current:60mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

BJT, NPN, 160V, SOT-23, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:160V; Continuous Collector Current:60mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

Supplier's Site
Bjt, Npn, 160V, Sot-23; Transistor Polarity Onsemi - 88H4796 - Newark, An Avnet Company
Chicago, IL, United States
Bjt, Npn, 160V, Sot-23; Transistor Polarity Onsemi
88H4796
Bjt, Npn, 160V, Sot-23; Transistor Polarity Onsemi 88H4796
BJT, NPN, 160V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:160V; Continuous Collector Current:60mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

BJT, NPN, 160V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:160V; Continuous Collector Current:60mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

Supplier's Site
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 160 V, 225 Mw, 600 Ma, 80 Rohs Compliant Onsemi - 58M9157 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 160 V, 225 Mw, 600 Ma, 80 Rohs Compliant Onsemi
58M9157
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 160 V, 225 Mw, 600 Ma, 80 Rohs Compliant Onsemi 58M9157
Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 225 mW, 600 mA, 80 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 225 mW, 600 mA, 80 RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor, Npn, 160V, 600Ma, Sot-23-3; Transistor Polarity Onsemi - 94W9011 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, 160V, 600Ma, Sot-23-3; Transistor Polarity Onsemi
94W9011
Transistor, Npn, 160V, 600Ma, Sot-23-3; Transistor Polarity Onsemi 94W9011
TRANSISTOR, NPN, 160V, 600MA, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:30hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, NPN, 160V, 600MA, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:30hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBT5551LT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMBT5551LT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMBT5551LT1G
TRANS NPN 160V 0.6A SOT23-3

TRANS NPN 160V 0.6A SOT23-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MMBT5551LT1G
Bipolar Transistors - BJT MMBT5551LT1G
Bipolar Transistors - BJT 600mA 160V NPN

Bipolar Transistors - BJT 600mA 160V NPN

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) RS Components, Ltd. RS Components, Ltd. Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Rochester Electronics Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MMBT5551LT1G 5450400 5450400P 023777-MMBT5551LT1G 276-MMBT5551LT1G MMBT5551LT1GOSCT-ND MMBT5551LT1G 03P0690 58M9157 94W9011 MMBT5551LT1G MMBT5551LT1G
Product Name Single Bipolar Transistors Bipolar Transistors Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MMBT5551LT1G 160V 0.6A SOT-23 Bipolar Transistor Single Bipolar Transistors Bjt, Npn, 160V, Sot-23, Full Reel; Transistor Polarity Onsemi Bipolar (Bjt) Single Transistor, General Purpose, Npn, 160 V, 225 Mw, 600 Ma, 80 Rohs Compliant Onsemi Transistor, Npn, 160V, 600Ma, Sot-23-3; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN; NPN NPN NPN NPN; NPN NPN NPN NPN NPN NPN NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; Sot-23 SOT23; SOT-23 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; SOT-23-CPR TO-3; SOT23 TO-3 TO-3; SOT23
IC(max) 600 milliamps 600 milliamps 60 milliamps 600 milliamps
VCEO 160 volts 160 volts 160 volts 160 volts
Output Power 0.2250 watts
Unlock Full Specs
to access all available technical data