onsemi TRANSISTORS - Transistors (BJT) - Single - MMBT5551 MMBT5551

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 096013-MMBT5551 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Family Name: MMBT5551 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 350mW Alternative Parts (Cross-Reference): 2N5551S; MMBT5551-7-F; CMPT5551 PBFREE; CMPT5551; Introduction Date: September 01, 1998 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Multimedia, Industrial Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 096013-MMBT5551 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Family Name: MMBT5551 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 350mW Alternative Parts (Cross-Reference): 2N5551S; MMBT5551-7-F; CMPT5551 PBFREE; CMPT5551; Introduction Date: September 01, 1998 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Multimedia, Industrial Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MMBT5551 - 096013-MMBT5551 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBT5551
096013-MMBT5551
TRANSISTORS - Transistors (BJT) - Single - MMBT5551 096013-MMBT5551
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 096013-MMBT5551 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Family Name: MMBT5551 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 350mW Alternative Parts (Cross-Reference): 2N5551S; MMBT5551-7-F; CMPT5551 PBFREE; CMPT5551; Introduction Date: September 01, 1998 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Multimedia, Industrial Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 096013-MMBT5551
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Family Name: MMBT5551
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 350mW
Alternative Parts (Cross-Reference): 2N5551S; MMBT5551-7-F; CMPT5551 PBFREE; CMPT5551;
Introduction Date: September 01, 1998
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Multimedia, Industrial
Quantity per package: 3k pcs

Buy Now Datasheet
Single Bipolar Transistors - MMBT5551FSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT5551FSTR-ND
Single Bipolar Transistors MMBT5551FSTR-ND
Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 350mW Surface Mount SOT-23-3

Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 350mW Surface Mount SOT-23-3

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey
Product Category Bipolar RF Transistors Transistors
Product Number 096013-MMBT5551 MMBT5551FSTR-ND
Product Name TRANSISTORS - Transistors (BJT) - Single - MMBT5551 Single Bipolar Transistors
Polarity NPN; NPN NPN
Package Type SOT3; SOT23; SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Reel - TR
IC(max) 600 milliamps
VCEO 160 volts
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