onsemi Single Bipolar Transistors MMBT5550

Description
Bipolar (BJT) Transistor NPN 140V 600mA 50MHz 350mW Surface Mount SOT-23-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 140V 600mA 50MHz 350mW Surface Mount SOT-23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MMBT5550TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT5550TR-ND
Single Bipolar Transistors MMBT5550TR-ND
Bipolar (BJT) Transistor NPN 140V 600mA 50MHz 350mW Surface Mount SOT-23-3

Bipolar (BJT) Transistor NPN 140V 600mA 50MHz 350mW Surface Mount SOT-23-3

Buy Now Datasheet
 - MMBT5550 - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - MMBT5550 - 023776-MMBT5550 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBT5550
023776-MMBT5550
TRANSISTORS - Transistors (BJT) - Single - MMBT5550 023776-MMBT5550
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 023776-MMBT5550 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 50MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 140V Max Vce (sat): 250mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 60 @ 10mA, 5V Maximum Power Dissipation: 350mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 023776-MMBT5550
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 50MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 140V
Max Vce (sat): 250mV @ 5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 60 @ 10mA, 5V
Maximum Power Dissipation: 350mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics
Product Category Transistors RF Transistors Transistors
Product Number MMBT5550TR-ND MMBT5550 023776-MMBT5550
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MMBT5550
Polarity NPN NPN NPN; NPN
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