PNP silicon switching transistor in SOT-23 package with a collector-emitter voltage rating of -40 V, continuous collector current of -600 mA, and power dissipation of 225 mW on FR-5 board. Junction and storage temperature range is -55 to +150 °C. Features a current gain (hFE) of 20 to 300 depending on collector current and collector-emitter voltage. Includes switching times: delay time 15 ns, rise time 20 ns, storage time 225 ns, and fall time 30 ns. Meets RoHS standards.
Small Signal Bipolar Transistor, 0.6A, 40V, PNP, TO-236AB
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | MMBT4403LT1 REEL |
| Polarity | PNP |