onsemi Single Bipolar Transistors MMBT4401K

Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MMBT4401K - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet
Single Bipolar Transistors - MMBT4401K-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT4401K-ND
Single Bipolar Transistors MMBT4401K-ND
Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 350mW Surface Mount SOT-23-3

Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 350mW Surface Mount SOT-23-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MMBT4401K - 059156-MMBT4401K - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBT4401K
059156-MMBT4401K
TRANSISTORS - Transistors (BJT) - Single - MMBT4401K 059156-MMBT4401K
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 059156-MMBT4401K Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 750mV @ 50mA, 500mA Typical Gain (hFE) (Min): 100 @ 150mA, 1V Maximum Power Dissipation: 350mW

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 059156-MMBT4401K
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 750mV @ 50mA, 500mA
Typical Gain (hFE) (Min): 100 @ 150mA, 1V
Maximum Power Dissipation: 350mW

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBT4401K - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMBT4401K
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMBT4401K
TRANS NPN 40V 0.6A SOT23-3

TRANS NPN 40V 0.6A SOT23-3

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number MMBT4401K MMBT4401K-ND 059156-MMBT4401K MMBT4401K
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MMBT4401K Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN
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