onsemi Single Bipolar Transistors MMBT4401

Description
Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 350mW Surface Mount SOT-23-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 350mW Surface Mount SOT-23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MMBT4401FSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT4401FSTR-ND
Single Bipolar Transistors MMBT4401FSTR-ND
Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 350mW Surface Mount SOT-23-3

Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 350mW Surface Mount SOT-23-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MMBT4401 - 023762-MMBT4401 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBT4401
023762-MMBT4401
TRANSISTORS - Transistors (BJT) - Single - MMBT4401 023762-MMBT4401
Manufacturer: ON Semiconductor Win Source Part Number: 023762-MMBT4401 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 750mV @ 50mA, 500mA Typical Gain (hFE) (Min): 100 @ 150mA, 1V Maximum Power Dissipation: 300mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 023762-MMBT4401
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 750mV @ 50mA, 500mA
Typical Gain (hFE) (Min): 100 @ 150mA, 1V
Maximum Power Dissipation: 300mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBT4401 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMBT4401
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMBT4401
BJT SOT23 40V NPN 0.25W 150C

BJT SOT23 40V NPN 0.25W 150C

Supplier's Site
Single Bipolar Transistors - MMBT4401 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MMBT4401
Single Bipolar Transistors MMBT4401
TRANS NPN 40V 0.6A SOT23-3

TRANS NPN 40V 0.6A SOT23-3

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MMBT4401FSTR-ND 023762-MMBT4401 MMBT4401 MMBT4401
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MMBT4401 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single Bipolar Transistors
Polarity NPN NPN; NPN NPN; NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 600 milliamps 600 milliamps
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