onsemi TRANSISTORS - Transistors (BJT) - Single - MMBT4354 MMBT4354

Description
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MMBT4354 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet
 - MMBT4354 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - MMBT4354 - 023760-MMBT4354 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBT4354
023760-MMBT4354
TRANSISTORS - Transistors (BJT) - Single - MMBT4354 023760-MMBT4354
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 023760-MMBT4354 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 500nA (ICBO) Typical Gain (hFE) (Min): 50 @ 10mA, 5V Maximum Power Dissipation: 350mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 023760-MMBT4354
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 500nA (ICBO)
Typical Gain (hFE) (Min): 50 @ 10mA, 5V
Maximum Power Dissipation: 350mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
Single Bipolar Transistors - MMBT4354TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMBT4354TR-ND
Single Bipolar Transistors MMBT4354TR-ND
Bipolar (BJT) Transistor PNP 60V 800mA 350mW Surface Mount SOT-23-3

Bipolar (BJT) Transistor PNP 60V 800mA 350mW Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBT4354 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMBT4354
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMBT4354
TRANS PNP 60V 0.8A SOT23-3

TRANS PNP 60V 0.8A SOT23-3

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number MMBT4354 023760-MMBT4354 MMBT4354TR-ND MMBT4354
Product Name TRANSISTORS - Transistors (BJT) - Single - MMBT4354 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP PNP
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