onsemi MMBT3904-G

NPN general purpose transistor in SOT-23 package, rated for 40 V collector-emitter voltage, 200 mA continuous collector current, and 225 mW power dissipation at 25°C, with thermal derating of 1.8 mW/°C above 25°C; junction temperature range is -55°C to +150°C. DC current gain (hFE) ranges from 30 to 300 depending on collector current, with a current gain-bandwidth product of 300 MHz and collector-emitter saturation voltage of 0.2 V at 10 mA collector current and 1 mA base current. Input capacitance is 8.0 pF and output capacitance is 4.0 pF at 1 MHz. Marked as 1AM with month code.