onsemi Single Bipolar Transistors MMBT3640LT1

The MMBT3640LT1 is a PNP silicon switching transistor in an SOT-23 (TO-236AB) package, rated for a collector-emitter voltage of -12 Vdc and a continuous collector current of -80 mA. It features a total device dissipation of 225 mW on FR-4 PCB and 300 mW on alumina substrate, with a junction temperature range of -55°C to +150°C. The device has a DC current gain (hFE) of 20 to 120, collector-emitter saturation voltage of -0.2 V to -0.6 V, and a current-gain bandwidth product of 500 MHz. Pinout is base, emitter, collector as defined by Style 6.