The MMBT2907A series is a PNP silicon bipolar transistor designed for general-purpose switching and amplification applications. It is housed in the SOT-23 (TO-236AB) package with dimensions of 2.90 mm length, 1.30 mm width, and 1.00 mm height. The device has a collector-emitter voltage rating of -60 V, a continuous collector current of -600 mA, and a peak collector current of -1200 mA. Power dissipation is 300 mW on alumina substrate and 2.85 mW on FR-5 board at 25°C, with a thermal resistance junction-to-ambient of 357 °C/W on heat spreader or equivalent. Junction and storage temperature range from -55°C to +150°C. The transistor is AEC-Q101 qualified, Pb-free, halogen-free, and RoHS compliant.
Product overview: MMBT2907AT1 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT2907AT1 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MMBT2907AT1 |
| Product Name | Bipolar Transistor |
