The MMBT2907 is a PNP general-purpose transistor packaged in SOT-23, designed for applications requiring collector currents up to 800 mA. It has a collector-emitter voltage rating of -40 V and a total device dissipation of 350 mW. The thermal resistance from junction to ambient is 357 °C/W when mounted on a 1.6 inch x 1.6 inch FR-4 PCB. The device meets RoHS compliance and operates within a junction temperature range of -55°C to +150°C. DC current gain (hFE) ranges from 30 to 300 at -10 V collector-emitter bias and -150 mA collector current. Collector-emitter saturation voltage is -1.6 V at -500 mA collector current and -50 mA base current.
Bipolar (BJT) Single Transistor, PNP, 40 V, 350 mW, 800 mA, 300 RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 58M9143 |
| Product Name | Bipolar (Bjt) Single Transistor, Pnp, 40 V, 350 Mw, 800 Ma, 300 Rohs Compliant Onsemi |
| Polarity | PNP |
