The MMBT2222ATT1G is a general-purpose NPN silicon transistor designed for low power surface mount applications, housed in the SOT-416/SC-75 package. It features a maximum collector-emitter voltage of 40V and a collector current rating of 600mA, making it suitable for various amplifier applications. The device is AEC-Q101 qualified, indicating its reliability for automotive and other demanding environments. It is also RoHS compliant, being lead-free and halogen-free. The transistor exhibits a DC current gain (hFE) ranging from 35 to 100, depending on the collector current, and has a transition frequency of 300MHz. The maximum power dissipation is rated at 150mW, with a thermal resistance of 833¬8C/W from junction to ambient. The operating temperature range is from -55¬8C to +150¬8C, ensuring versatility in different conditions.
NPN BJT Transistor 40V 600mA 300MHz SOT-416 Product overview: MMBT2222ATT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 600mA, 300MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 600mA, 300MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT2222ATT1G can be used for catalog matching and distributor lookup.
TRANS NPN 40V 0.6A SC75 SOT416
Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 150mW Surface Mount SC-75, SOT-416
Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 150mW Surface Mount SC-75, SOT-416
Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 150mW Surface Mount SC-75, SOT-416
Manufacturer: ON Semiconductor
Win Source Part Number: 023733-MMBT2222ATT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-75, SOT-416
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 1V @ 50mA, 500mA
Typical Gain (hFE) (Min): 100 @ 150mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
40V 150mW 100@150mA,10V 600mA NPN SC-75(SOT-523) Bipolar Transistors - BJT ROHS
TRANS NPN 40V 0.6A SC75 SOT416
BIPOLAR TRANSISTOR, NPN, 40V; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:300MHz RoHS Compliant: Yes
BIPOLAR TRANSISTOR, NPN, 40V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:600mA; Power Dissipation Pd:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
TRANSISTOR, NPN, 40V, 600MA, SOT-416-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:600mA; DC Current Gain hFE:35hFE; Transistor RoHS Compliant: Yes
TRANS, BIPOL, NPN, 40V, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:600mA; DC Current Gain hFE:35hFE; Transistor Case RoHS Compliant: Yes
Bipolar Transistors - BJT BJT SS SC75 GP XSTR NPN 40V
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 276-MMBT2222ATT1G | MMBT2222ATT1G | MMBT2222ATT1GOSDKR-ND | 023733-MMBT2222ATT1G | MMBT2222ATT1G | MMBT2222ATT1G | 10N9479 | 98H0747 | 94W8998 | 22AC4805 | MMBT2222ATT1G |
| Product Name | 40V 600mA 300MHz Bipolar Transistor | Single Bipolar Transistors | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - MMBT2222ATT1G | Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Npn, 40V; Transistor Polarity Onsemi | Bipolar Transistor, Npn, 40V, Full Reel; Transistor Polarity Onsemi | Transistor, Npn, 40V, 600Ma, Sot-416-3; Transistor Polarity Onsemi | Trans, Bipol, Npn, 40V, Sc-75; Transistor Polarity Onsemi | Bipolar Transistors - BJT |
| Polarity | NPN | NPN; NPN | NPN | NPN; NPN | NPN | NPN | NPN | NPN | NPN | ||
| IC(max) | 600 milliamps | 600 milliamps | 600 milliamps | 600 milliamps | 600 milliamps | 600 milliamps | |||||
| VCEO | 40 volts | 40 volts | 40 volts | 40 volts | 40 volts | ||||||
| VCBO | 75 volts | ||||||||||
| fT | 300 MHz | 300 MHz |
