Manufacturer: ON Semiconductor
Win Source Part Number: 023717-MMBFJ177LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Polarity: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
Resistance - RDS(On): 300 Ohm
Family Name: MMBFJ177L
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Power Dissipation: 225mW
Max Input Capacitance: 11pF @ 10V (VGS)
Alternative Parts (Cross-Reference): CMPFJ174; SST177-T1; SST174;
Introduction Date: July 14, 1999
ECCN: EAR99
Country of Origin: China, Czech Republic
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
JFET P-CH 30V 0.225W SOT23-3
JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)
JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)
JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)
P-CH JFET 3-Pin SOT-23 Product overview: MMBFJ177LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-MMBFJ177LT1G can be used for catalog matching and distributor lookup.
TRANSISTOR, JFET, P, 30V, SOT-23; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:-1.5mA; Zero Gate Voltage Drain Current Idss Max:-20mA; Gate-Source Cutoff Voltage Vgs(off) Max:2.5V; Transistor Case Style:SOT-23;RoHS Compliant: Yes
225mW 1.5mA@15V P-Channel 300Ω 30V SOT-23 JFETs ROHS
JFET P-CH 30V SOT23-3
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Transistors | Bipolar RF Transistors | Transistors | Transistors | RF Transistors |
| Product Number | 023717-MMBFJ177LT1G | MMBFJ177LT1G | MMBFJ177LT1GOSTR-ND | 288-MMBFJ177LT1G | 58M9121 | MMBFJ177LT1G | MMBFJ177LT1G |
| Product Name | JFETs (Junction Field Effect) - MMBFJ177LT1G | JFETs | JFETs | SOT-23 Bipolar Transistor | Transistor, Jfet, P, 30V, Sot-23; Breakdown Voltage Vbr Onsemi | Triode/MOS Tube/Transistor >> JFETs | Discrete Semiconductor Products - Transistors - JFETs |
| Transistor Type | JFET | JFET | JFET; Transistor, Jfet, P, 30V, Sot-23; Breakdown Voltage Vbr Onsemi | JFET | |||
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Package Type | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | SOT23 | SOT23; SOT-23-3 (TO-236) |
