onsemi JFETs MMBFJ177LT1G

Description
JFET P-CH 30V 0.225W SOT23-3
Request a Quote Datasheet
Description
JFET P-CH 30V 0.225W SOT23-3
Request a Quote Datasheet

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JFET P-CH 30V 0.225W SOT23-3

JFET P-CH 30V 0.225W SOT23-3

Supplier's Site Datasheet
JFETs - MMBFJ177LT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)

JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
JFETs - MMBFJ177LT1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)

JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
JFETs - MMBFJ177LT1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)

JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
JFETs (Junction Field Effect) - MMBFJ177LT1G - 023717-MMBFJ177LT1G - Win Source Electronics
Laguna Hills, CA, United States
JFETs (Junction Field Effect) - MMBFJ177LT1G
023717-MMBFJ177LT1G
JFETs (Junction Field Effect) - MMBFJ177LT1G 023717-MMBFJ177LT1G
Manufacturer: ON Semiconductor Win Source Part Number: 023717-MMBFJ177LT1G Packaging: Reel - TR Mounting: SMD (SMT) Polarity: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA Resistance - RDS(On): 300 Ohm Family Name: MMBFJ177L Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Power Dissipation: 225mW Max Input Capacitance: 11pF @ 10V (VGS) Alternative Parts (Cross-Reference): CMPFJ174; SST177-T1; SST174; Introduction Date: July 14, 1999 ECCN: EAR99 Country of Origin: China, Czech Republic Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 023717-MMBFJ177LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Polarity: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
Resistance - RDS(On): 300 Ohm
Family Name: MMBFJ177L
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Power Dissipation: 225mW
Max Input Capacitance: 11pF @ 10V (VGS)
Alternative Parts (Cross-Reference): CMPFJ174; SST177-T1; SST174;
Introduction Date: July 14, 1999
ECCN: EAR99
Country of Origin: China, Czech Republic
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Transistor, Jfet, P, 30V, Sot-23; Breakdown Voltage Vbr Onsemi - 58M9121 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Jfet, P, 30V, Sot-23; Breakdown Voltage Vbr Onsemi
58M9121
Transistor, Jfet, P, 30V, Sot-23; Breakdown Voltage Vbr Onsemi 58M9121
TRANSISTOR, JFET, P, 30V, SOT-23; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:-1.5mA; Zero Gate Voltage Drain Current Idss Max:-20mA; Gate-Source Cutoff Voltage Vgs(off) Max:2.5V; Transistor Case Style:SOT-23;RoHS Compliant: Yes

TRANSISTOR, JFET, P, 30V, SOT-23; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:-1.5mA; Zero Gate Voltage Drain Current Idss Max:-20mA; Gate-Source Cutoff Voltage Vgs(off) Max:2.5V; Transistor Case Style:SOT-23;RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - JFETs - MMBFJ177LT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - JFETs
MMBFJ177LT1G
Discrete Semiconductor Products - Transistors - JFETs MMBFJ177LT1G
JFET P-CH 30V SOT23-3

JFET P-CH 30V SOT23-3

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> JFETs
MMBFJ177LT1G
Triode/MOS Tube/Transistor >> JFETs MMBFJ177LT1G
225mW 1.5mA@15V P-Channel 300Ω 30V SOT-23 JFETs ROHS

225mW 1.5mA@15V P-Channel 300Ω 30V SOT-23 JFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Transistors Transistors Transistors Transistors RF Transistors Transistors
Product Number MMBFJ177LT1G MMBFJ177LT1GOSTR-ND 023717-MMBFJ177LT1G 58M9121 MMBFJ177LT1G MMBFJ177LT1G
Product Name JFETs JFETs JFETs (Junction Field Effect) - MMBFJ177LT1G Transistor, Jfet, P, 30V, Sot-23; Breakdown Voltage Vbr Onsemi Discrete Semiconductor Products - Transistors - JFETs Triode/MOS Tube/Transistor >> JFETs
Transistor Type JFET JFET JFET; Transistor, Jfet, P, 30V, Sot-23; Breakdown Voltage Vbr Onsemi JFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) TO-3; SOT23 SOT23; SOT-23-3 (TO-236) SOT23
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