JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)
JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)
JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)
P-CH JFET SOT-23 25V 125R 225mW T/R Product overview: MMBFJ175LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 225mW, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, 225mW, SOT-23, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-MMBFJ175LT1G can be used for catalog matching and distributor lookup.
Small Signal Field-Effect Transistor, 0.06A I(D), 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Manufacturer: ON Semiconductor
Win Source Part Number: 023715-MMBFJ175LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Polarity: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
Resistance - RDS(On): 125 Ohm
Family Name: MMBFJ175L
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Power Dissipation: 225mW
Max Input Capacitance: 11pF @ 10V (VGS)
Alternative Parts (Cross-Reference): SMMBFJ175LT1G; CMPFJ175 BK; SST174; CMPFJ176 BK;
Introduction Date: December 10, 2001
ECCN: EAR99
Country of Origin: China, United States of America, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
TRANSISTOR, JFET, P, 30V, SOT-23; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:7mA; Zero Gate Voltage Drain Current Idss Max:60mA; Gate-Source Cutoff Voltage Vgs(off) Max:6V; Transistor Case Style:SOT-23; RoHS Compliant: Yes
225mW 7mA@15V P-Channel 125Ω 30V SOT-23 JFETs ROHS
JFET P-CH 30V 0.225W SOT23-3
JFET P-CH 30V SOT23-3
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Transistors | Bipolar RF Transistors | RF MOSFET Transistors | Transistors | Transistors | Transistors | Transistors | RF Transistors |
| Product Number | MMBFJ175LT1GOSTR-ND | 8647840P | 8647840 | 288-MMBFJ175LT1G | MMBFJ175LT1G | 023715-MMBFJ175LT1G | 58M9119 | MMBFJ175LT1G | MMBFJ175LT1G | MMBFJ175LT1G |
| Product Name | JFETs | JFETs | JFETs | 25V 225mW SOT-23 Bipolar Transistor | JFETs (Junction Field Effect) - MMBFJ175LT1G | Transistor, Jfet, P, 30V, Sot-23; Breakdown Voltage Vbr Onsemi | Triode/MOS Tube/Transistor >> JFETs | JFETs | Discrete Semiconductor Products - Transistors - JFETs | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; SOT-23 | SOT23; Sot-23 | SOT23; SOT-23-CPR | SOT3; SOT23; SOT-23-3 (TO-236) | TO-3; SOT23 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; SOT-23-3 (TO-236) | |
| Transistor Type | JFET | JFET | JFET | JFET; Transistor, Jfet, P, 30V, Sot-23; Breakdown Voltage Vbr Onsemi | JFET | JFET | ||||
| PD | 225 milliwatts |
