onsemi N-Channel 500mA 60V MOSFET Transistor MMBF170LT3

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, TO-236, CASE 318-08, 3 PIN Product overview: MMBF170LT3 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500mA, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500mA, 60V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MMBF170LT3 can be used for catalog matching and distributor lookup.

N-Channel 60V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)

Manufacturer: ON Semiconductor
Win Source Part Number: 102417-MMBF170LT3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 225mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 500mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 60pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 10V