onsemi Single FETs, MOSFETs MMBF170LT3

Description
N-Channel 60V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet
Description
N-Channel 60V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MMBF170LT3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MMBF170LT3-ND
Single FETs, MOSFETs MMBF170LT3-ND
N-Channel 60V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 60V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMBF170LT3 - 102417-MMBF170LT3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMBF170LT3
102417-MMBF170LT3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMBF170LT3 102417-MMBF170LT3
Manufacturer: ON Semiconductor Win Source Part Number: 102417-MMBF170LT3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 225mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 500mA (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 60pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 10V

Manufacturer: ON Semiconductor
Win Source Part Number: 102417-MMBF170LT3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 225mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 500mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 60pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 10V

Buy Now Datasheet
 - MMBF170LT3 - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MMBF170LT3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MMBF170LT3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MMBF170LT3
MOSFET N-CH 60V 500MA SOT23-3

MOSFET N-CH 60V 500MA SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors RF Transistors
Product Number MMBF170LT3-ND 102417-MMBF170LT3 MMBF170LT3 MMBF170LT3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMBF170LT3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) TO-236AB
V(BR)DSS 60 volts
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