onsemi Single Bipolar Transistors MJW21196

Description
Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Through Hole TO-247-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MJW21196OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJW21196OS-ND
Single Bipolar Transistors MJW21196OS-ND
Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Through Hole TO-247-3

Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Through Hole TO-247-3

Buy Now Datasheet
Singapore
250 V 16 A Bipolar Transistor
276-MJW21196
250 V 16 A Bipolar Transistor 276-MJW21196
Bipolar Transistor, NPN, 250 V, 16 A, TO-247, 30-TUBE Product overview: MJW21196 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250 V, 16 A. Search-friendly keywords include transistor, BJT, switching, amplification, 250 V, 16 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJW21196 can be used for catalog matching and distributor lookup.

Bipolar Transistor, NPN, 250 V, 16 A, TO-247, 30-TUBE Product overview: MJW21196 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250 V, 16 A. Search-friendly keywords include transistor, BJT, switching, amplification, 250 V, 16 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJW21196 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJW21196 - 1223813-MJW21196 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJW21196
1223813-MJW21196
TRANSISTORS - Transistors (BJT) - Single - MJW21196 1223813-MJW21196
Manufacturer: ON Semiconductor Win Source Part Number: 1223813-MJW21196 Packaging: Tube Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 4MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-247-3 Current - Collector (Ic) (Maximum): 16A Voltage - Collector Emitter Breakdown (Maximum): 250V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 3V at 3.2A, 16A DC Current Gain (hFE) (Minimum) at Ic, Vce: 20 at 8A, 5V Maximum Power: 200W

Manufacturer: ON Semiconductor
Win Source Part Number: 1223813-MJW21196
Packaging: Tube
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 4MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Status: Obsolete
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 16A
Voltage - Collector Emitter Breakdown (Maximum): 250V
Current - Collector Cutoff (Maximum): 100μA
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 3V at 3.2A, 16A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 20 at 8A, 5V
Maximum Power: 200W

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJW21196 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJW21196
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJW21196
TRANS NPN 250V 16A TO247-3

TRANS NPN 250V 16A TO247-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors
Product Number MJW21196OS-ND 276-MJW21196 1223813-MJW21196 MJW21196
Product Name Single Bipolar Transistors 250 V 16 A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - MJW21196 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type TO-247; TO-247-3 TO-247; SOT3
IC(max) 16000 milliamps 16000 milliamps
VCEO 250 volts 250 volts
VCBO 400 volts
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