onsemi Single Bipolar Transistors MJW21195

Description
Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-247-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-247-3
Request a Quote Datasheet

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Product
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Single Bipolar Transistors - MJW21195OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJW21195OS-ND
Single Bipolar Transistors MJW21195OS-ND
Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-247-3

Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJW21195 - 1223812-MJW21195 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJW21195
1223812-MJW21195
TRANSISTORS - Transistors (BJT) - Single - MJW21195 1223812-MJW21195
Manufacturer: ON Semiconductor Win Source Part Number: 1223812-MJW21195 Packaging: Tube Mounting Style: Through Hole Transistor Type: PNP Frequency - Transition: 4MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-247-3 Current - Collector (Ic) (Maximum): 16A Voltage - Collector Emitter Breakdown (Maximum): 250V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 3V at 3.2A, 16A DC Current Gain (hFE) (Minimum) at Ic, Vce: 20 at 8A, 5V Maximum Power: 200W

Manufacturer: ON Semiconductor
Win Source Part Number: 1223812-MJW21195
Packaging: Tube
Mounting Style: Through Hole
Transistor Type: PNP
Frequency - Transition: 4MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Status: Obsolete
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 16A
Voltage - Collector Emitter Breakdown (Maximum): 250V
Current - Collector Cutoff (Maximum): 100μA
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 3V at 3.2A, 16A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 20 at 8A, 5V
Maximum Power: 200W

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJW21195 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJW21195
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJW21195
TRANS PNP 250V 16A TO247-3

TRANS PNP 250V 16A TO247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Bipolar RF Transistors
Product Number MJW21195OS-ND 1223812-MJW21195 MJW21195
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJW21195 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type TO-247; TO-247-3 TO-247; SOT3
Packing Method Tube; Tube Tube; Tube
TJ -65 to 150 C (-85 to 302 F)
Power Gain 20 dB
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