onsemi Single Bipolar Transistors MJK44H11TWG

The MJK44H11TWG is an NPN power transistor rated for 80 V collector-emitter voltage and 8 A continuous collector current, designed for general purpose switching and power applications. It is housed in an LFPAK4 5x6 package with a thermal resistance from junction to ambient of 70°C/W when mounted on a 1 in², 2 oz. Cu FR4 board. The device is Pb-free, halogen-free, RoHS compliant, AEC-Q101 qualified, and PPAP capable for automotive use, with a maximum junction temperature of 150°C and a peak collector current of 16 A. Its DC current gain ranges from 40 to 60 at 1 V collector-emitter voltage and 2 to 4 A collector current, and it has a gain-bandwidth product of 85 MHz.