onsemi Transistor Polarity Onsemi MJF47G.

Description
Transistor Polarity:NPN; Collector Emitter Voltage Max:250V; Continuous Collector Current:1A; Power Dissipation:40mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:10Hz; DC Current Gain hFE Min:10hFE RoHS Compliant: Yes
  • Transistor Polarity Onsemi - 15AC3562 - Newark, An Avnet Company
    Newark, An Avnet Company
Datasheet
Description
Transistor Polarity:NPN; Collector Emitter Voltage Max:250V; Continuous Collector Current:1A; Power Dissipation:40mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:10Hz; DC Current Gain hFE Min:10hFE RoHS Compliant: Yes
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor Polarity Onsemi - 15AC3562 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor Polarity Onsemi
15AC3562
Transistor Polarity Onsemi 15AC3562
Transistor Polarity:NPN; Collector Emitter Voltage Max:250V; Continuous Collector Current:1A; Power Dissipation:40mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:10Hz; DC Current Gain hFE Min:10hFE RoHS Compliant: Yes

Transistor Polarity:NPN; Collector Emitter Voltage Max:250V; Continuous Collector Current:1A; Power Dissipation:40mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:10Hz; DC Current Gain hFE Min:10hFE RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 15AC3562
Product Name Transistor Polarity Onsemi
Transistor Type Transistor Polarity Onsemi
Unlock Full Specs
to access all available technical data

Similar Products

Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R040M1H - AIMDQ75R040M1H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R040M1H
AIMDQ75R040M1H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor - QPD0020 - Qorvo
Qorvo
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
QPD0020
Specs
Transistor Technology / Material DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
Package Type QFN
Transistor Grade / Operating Range Military
View Details
CSD25304W1015 CSD25304W1015 20-V P-Channel NexFET? Power MOSFET - CSD25304W1015T - Texas Instruments
Texas Instruments
CSD25304W1015 CSD25304W1015 20-V P-Channel NexFET? Power MOSFET
CSD25304W1015T
Specs
Transistor Type Power-MOSFET
Polarity P-Channel
Package Type WLP 1.0x1.5
View Details
5 suppliers
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD810027SCL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY
ALD810027SCL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC16
View Details
3 suppliers