Bipolar (BJT) Transistor PNP 80V 10A 40MHz 2W Through Hole TO-220FP
Manufacturer: ON Semiconductor
Win Source Part Number: 041668-MJF45H11G
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 40MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1V @ 400mA, 8A
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 40 @ 4A, 1V
Maximum Power Dissipation: 2W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
PNP BJT 350V 10A TO-220 Power Transistor Product overview: MJF45H11G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 10A, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 350V, 10A, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJF45H11G can be used for catalog matching and distributor lookup.
TRANSISTOR, BIPOL, PNP, 80V, TO-220-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:40MHz; Power Dissipation Pd:36W; DC Collector Current:-10A; DC Current Gain hFE:40hFE; Transistor Case RoHS Compliant: Yes
POWER BIPOLAR TRANSISTOR, 10A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
Bipolar Transistors - BJT 10A 80V 50W PNP
TRANS PNP 80V 10A TO220FP
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | MJF45H11GOS-ND | 041668-MJF45H11G | 276-MJF45H11G | 1840971 | 1841139P | 82Y7000 | 18730600 | MJF45H11G | MJF45H11G |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - MJF45H11G | 350V 10A TO-220 Bipolar Transistor | Bipolar Transistors | Bipolar Transistors | Transistor, Bipol, Pnp, 80V, To-220-3; Transistor Polarity Onsemi | Transistor | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | PNP | PNP; PNP | PNP | PNP | PNP | PNP | |||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220FP | TO-220; To-220 | TO-220; TO-220 | TO-3; TO-220 | ||||
| IC(max) | 10000 milliamps | 10000 milliamps | |||||||
| VCEO | 350 volts | 80 volts | |||||||
| VCBO | 5 volts |
