onsemi Single Bipolar Transistors MJE803STU

Description
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MJE803STU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE803STU-ND
Single Bipolar Transistors MJE803STU-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3

Buy Now Datasheet
Singapore, Singapore
80V 4A Bipolar Transistor
276-MJE803STU
80V 4A Bipolar Transistor 276-MJE803STU
Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-126 Rail Product overview: MJE803STU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE803STU can be used for catalog matching and distributor lookup.

Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-126 Rail Product overview: MJE803STU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE803STU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJE803STU - 058937-MJE803STU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE803STU
058937-MJE803STU
TRANSISTORS - Transistors (BJT) - Single - MJE803STU 058937-MJE803STU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 058937-MJE803STU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2.8V @ 40mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 750 @ 2A, 3V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Quantity per package: 60

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 058937-MJE803STU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 2.8V @ 40mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 750 @ 2A, 3V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Quantity per package: 60

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE803STU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE803STU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE803STU
TRANS NPN DARL 80V 4A TO126-3

TRANS NPN DARL 80V 4A TO126-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number MJE803STU-ND 276-MJE803STU 058937-MJE803STU MJE803STU
Product Name Single Bipolar Transistors 80V 4A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - MJE803STU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN - Darlington
Package Type TO-225AA, TO-126-3 SOT3; TO-126
IC(max) 4000 milliamps 4000 milliamps
VCEO 80 volts 80 volts
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