Manufacturer: ON Semiconductor
Win Source Part Number: 058936-MJE802G
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 2.5V @ 30mA, 1.5A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 750 @ 1.5A, 3V
Maximum Power Dissipation: 40W
NPN Darlington Power Transistor, 80V, 4A, TO-225 Product overview: MJE802G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE802G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126
Darlington Transistors 4A 80V Bipolar Power NPN
DARLINGTON TRANSISTOR, NPN, 80V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
TRANSISTOR, BIPOL, NPN, 80V, TO-225-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:40W; DC Collector Current:4A; DC Current Gain hFE:100hFE; Transistor Case RoHS Compliant: Yes
TRANS NPN DARL 80V 4A TO126
TRANS NPN DARL 80V 4A TO126
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Darlington Transistors | Darlington Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 058936-MJE802G | 276-MJE802G | MJE802GOS-ND | MJE802G | 26K4472 | 82Y6997 | MJE802G | MJE802G |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - MJE802G | 80V 4A Bipolar Transistor | Single Bipolar Transistors | Darlington Transistors | Darlington Transistor, Npn, 80V, To-225; Transistor Polarity Onsemi | Transistor, Bipol, Npn, 80V, To-225-3; Transistor Polarity Onsemi | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN; NPN - Darlington | NPN | NPN | NPN | NPN | NPN - Darlington; NPN | ||
| Package Type | SOT3; TO-225AA | TO-225AA, TO-126-3 | TO-3 | TO-3 | TO-225AA, TO-126-3 | |||
| IC(max) | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | ||||
| VCEO | 80 volts | 80 volts | 80 volts | 80 volts | ||||
| VCBO | 80 volts |
