onsemi TRANSISTORS - Transistors (BJT) - Single - MJE802G MJE802G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 058936-MJE802G Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2.5V @ 30mA, 1.5A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 750 @ 1.5A, 3V Maximum Power Dissipation: 40W
  • TRANSISTORS - Transistors (BJT) - Single - MJE802G - 058936-MJE802G - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - MJE802G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single Bipolar Transistors - MJE802GOS-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE802G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Darlington Transistor, Npn, 80V, To-225; Transistor Polarity Onsemi - 26K4472 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Transistor, Bipol, Npn, 80V, To-225-3; Transistor Polarity Onsemi - 82Y6997 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 058936-MJE802G Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2.5V @ 30mA, 1.5A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 750 @ 1.5A, 3V Maximum Power Dissipation: 40W
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJE802G - 058936-MJE802G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE802G
058936-MJE802G
TRANSISTORS - Transistors (BJT) - Single - MJE802G 058936-MJE802G
Manufacturer: ON Semiconductor Win Source Part Number: 058936-MJE802G Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2.5V @ 30mA, 1.5A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 750 @ 1.5A, 3V Maximum Power Dissipation: 40W

Manufacturer: ON Semiconductor
Win Source Part Number: 058936-MJE802G
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 2.5V @ 30mA, 1.5A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 750 @ 1.5A, 3V
Maximum Power Dissipation: 40W

Buy Now Datasheet
Single Bipolar Transistors - MJE802G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJE802G
Single Bipolar Transistors MJE802G
TRANS NPN DARL 80V 4A TO126

TRANS NPN DARL 80V 4A TO126

Supplier's Site Datasheet
Single Bipolar Transistors - MJE802GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE802GOS-ND
Single Bipolar Transistors MJE802GOS-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126

Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE802G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE802G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE802G
TRANS NPN DARL 80V 4A TO126

TRANS NPN DARL 80V 4A TO126

Supplier's Site
Darlington Transistor, Npn, 80V, To-225; Transistor Polarity Onsemi - 26K4472 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Darlington Transistor, Npn, 80V, To-225; Transistor Polarity Onsemi
26K4472
Darlington Transistor, Npn, 80V, To-225; Transistor Polarity Onsemi 26K4472
DARLINGTON TRANSISTOR, NPN, 80V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

DARLINGTON TRANSISTOR, NPN, 80V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

Supplier's Site
Transistor, Bipol, Npn, 80V, To-225-3; Transistor Polarity Onsemi - 82Y6997 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipol, Npn, 80V, To-225-3; Transistor Polarity Onsemi
82Y6997
Transistor, Bipol, Npn, 80V, To-225-3; Transistor Polarity Onsemi 82Y6997
TRANSISTOR, BIPOL, NPN, 80V, TO-225-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:40W; DC Collector Current:4A; DC Current Gain hFE:100hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, BIPOL, NPN, 80V, TO-225-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:40W; DC Collector Current:4A; DC Current Gain hFE:100hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Darlington Transistors
MJE802G
Darlington Transistors MJE802G
Darlington Transistors 4A 80V Bipolar Power NPN

Darlington Transistors 4A 80V Bipolar Power NPN

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Darlington Transistors Transistors Darlington Transistors
Product Number 058936-MJE802G MJE802G MJE802GOS-ND MJE802G 26K4472 82Y6997 MJE802G
Product Name TRANSISTORS - Transistors (BJT) - Single - MJE802G Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Darlington Transistor, Npn, 80V, To-225; Transistor Polarity Onsemi Transistor, Bipol, Npn, 80V, To-225-3; Transistor Polarity Onsemi Darlington Transistors
Polarity NPN; NPN - Darlington NPN - Darlington; NPN NPN NPN NPN
Package Type SOT3; TO-225AA TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-3 TO-3
IC(max) 4000 milliamps 4000 milliamps 4000 milliamps
VCEO 80 volts 80 volts 80 volts
Output Power 40 watts
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