onsemi Single Bipolar Transistors MJE800STU

Description
TRANS NPN DARL 60V 4A TO126-3
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Description
TRANS NPN DARL 60V 4A TO126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MJE800STU - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJE800STU
Single Bipolar Transistors MJE800STU
TRANS NPN DARL 60V 4A TO126-3

TRANS NPN DARL 60V 4A TO126-3

Supplier's Site Datasheet
Single Bipolar Transistors - MJE800STUFS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE800STUFS-ND
Single Bipolar Transistors MJE800STUFS-ND
Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJE800STU - 788854-MJE800STU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE800STU
788854-MJE800STU
TRANSISTORS - Transistors (BJT) - Single - MJE800STU 788854-MJE800STU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 788854-MJE800STU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 40W Transistor Type: NPN - Darlington Family Name: MJE800 Categories: Discrete Semiconductor Products Manufacturer Package: TO-126 Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Maximum): 100μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V Alternative Parts (Cross-Reference): MJE3301; BD677 Lead Free; BD677; MJE800; Introduction Date: April 09, 1999 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 788854-MJE800STU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 40W
Transistor Type: NPN - Darlington
Family Name: MJE800
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-126
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Maximum): 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V
Alternative Parts (Cross-Reference): MJE3301; BD677 Lead Free; BD677; MJE800;
Introduction Date: April 09, 1999
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE800STU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE800STU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE800STU
TRANS NPN DARL 60V 4A TO126-3

TRANS NPN DARL 60V 4A TO126-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Darlington Transistors Bipolar RF Transistors
Product Number MJE800STU MJE800STUFS-ND 788854-MJE800STU MJE800STU
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJE800STU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN - Darlington; NPN NPN NPN
Package Type TO-225AA, TO-126-3 TO-225AA, TO-126-3 SOT3
IC(max) 4000 milliamps 0.1000 milliamps 4000 milliamps
VCEO 60 volts 60 volts
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