onsemi TRANSISTORS - Transistors (BJT) - Single - MJE800STU MJE800STU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 788854-MJE800STU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 40W Transistor Type: NPN - Darlington Family Name: MJE800 Categories: Discrete Semiconductor Products Manufacturer Package: TO-126 Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Maximum): 100μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V Alternative Parts (Cross-Reference): MJE3301; BD677 Lead Free; BD677; MJE800; Introduction Date: April 09, 1999 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 788854-MJE800STU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 40W Transistor Type: NPN - Darlington Family Name: MJE800 Categories: Discrete Semiconductor Products Manufacturer Package: TO-126 Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Maximum): 100μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V Alternative Parts (Cross-Reference): MJE3301; BD677 Lead Free; BD677; MJE800; Introduction Date: April 09, 1999 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJE800STU - 788854-MJE800STU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE800STU
788854-MJE800STU
TRANSISTORS - Transistors (BJT) - Single - MJE800STU 788854-MJE800STU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 788854-MJE800STU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 40W Transistor Type: NPN - Darlington Family Name: MJE800 Categories: Discrete Semiconductor Products Manufacturer Package: TO-126 Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Maximum): 100μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V Alternative Parts (Cross-Reference): MJE3301; BD677 Lead Free; BD677; MJE800; Introduction Date: April 09, 1999 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 788854-MJE800STU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 40W
Transistor Type: NPN - Darlington
Family Name: MJE800
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-126
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Maximum): 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V
Alternative Parts (Cross-Reference): MJE3301; BD677 Lead Free; BD677; MJE800;
Introduction Date: April 09, 1999
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - MJE800STUFS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE800STUFS-ND
Single Bipolar Transistors MJE800STUFS-ND
Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126-3

Buy Now Datasheet
Single Bipolar Transistors - MJE800STU - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJE800STU
Single Bipolar Transistors MJE800STU
TRANS NPN DARL 60V 4A TO126-3

TRANS NPN DARL 60V 4A TO126-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE800STU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE800STU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE800STU
TRANS NPN DARL 60V 4A TO126-3

TRANS NPN DARL 60V 4A TO126-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Darlington Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 788854-MJE800STU MJE800STUFS-ND MJE800STU MJE800STU
Product Name TRANSISTORS - Transistors (BJT) - Single - MJE800STU Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN - Darlington; NPN
IC(max) 0.1000 milliamps 4000 milliamps 4000 milliamps
TJ 150 C (302 F) 150 C (302 F)
Package Type SOT3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
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