Manufacturer: ON Semiconductor
Win Source Part Number: 1223749-MJE800G
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 40W
Transistor Type: NPN - Darlington
Family Name: MJE800
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-225AA
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Maximum): 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V
Alternative Parts (Cross-Reference): BD677; KTD1411; BD677A;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126
TRANS NPN DARL 60V 4A TO126
NPN Darlington Transistor 60V 4A 40W TO-225 Product overview: MJE800G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4A, 40W. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 4A, 40W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE800G can be used for catalog matching and distributor lookup.
Darlington Transistors 4A 60V Bipolar Power NPN
TRANS NPN DARL 60V 4A TO126
DARLINGTON TRANSISTOR, NPN, 60V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Darlington Transistors | Bipolar RF Transistors | Darlington Transistors |
| Product Number | 1223749-MJE800G | MJE800GOS-ND | MJE800G | 276-MJE800G | MJE800G | MJE800G | 45J1506 |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - MJE800G | Single Bipolar Transistors | Single Bipolar Transistors | 60V 4A 40W Bipolar Transistor | Darlington Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Darlington Transistor, Npn, 60V, To-225; Transistor Polarity Onsemi |
| Polarity | NPN | NPN | NPN - Darlington; NPN | NPN | NPN | ||
| Package Type | SOT3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-3 | |||
| Packing Method | Bulk; Bulk | Bulk; Bulk | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | ||||
| Power Gain | 750 dB |
