The MJE800 is a PNP silicon Darlington power transistor designed for general-purpose amplifier and low-speed switching applications. It is packaged in a TO-225 case (77-09) with a maximum collector current of 4.0 A and a collector-emitter voltage rating of 60 V. The device features a typical DC current gain of 2000 at 2.0 A, a collector-emitter saturation voltage of up to 2.5 V at 1.5 A, and a maximum power dissipation of 40 W. Thermal resistance from junction to case is 3.12°C/W, and the operating junction temperature range is -55°C to +150°C. The transistor includes built-in base-emitter resistors and is RoHS compliant. It is suitable for applications requiring high current gain and moderate switching speeds.
TRANS DARL NPN 4A 60V TO225AA Product overview: MJE800 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4A, 60V. Search-friendly keywords include transistor, BJT, switching, amplification, 4A, 60V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE800 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MJE800 |
| Product Name | 4A 60V Bipolar Transistor |
| Package Type | Bulk |
