The MJE700 is a PNP silicon Darlington power transistor for general-purpose amplifier and low-speed switching applications. It is packaged in a TO-225 case, with dimensions specified as 10.60 to 11.10 mm in length and 7.40 to 7.80 mm in width. The device has a collector-emitter voltage rating of 60 V, a collector current rating of 4.0 A, and a maximum power dissipation of 40 W. It features a typical DC current gain of 2000 at 2.0 A collector current. Thermal resistance from junction to case is 3.12°C/W, and from junction to ambient is 83.3°C/W. The operating and storage junction temperature range is -55°C to +150°C. The component is RoHS compliant and Pb-free.
TRANS DARL PNP 4A 60V TO225AA Product overview: MJE700 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4A, 60V. Search-friendly keywords include transistor, BJT, switching, amplification, 4A, 60V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE700 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MJE700 |
| Product Name | 4A 60V Bipolar Transistor |
| Package Type | Bulk |
