onsemi Single Bipolar Transistors MJE5852

The MJE5852 is a PNP silicon power transistor designed for high-voltage, high-speed switching in inductive circuits, particularly in switch-mode applications. It is packaged in a TO-220 case with dimensions of 10.10 × 15.12 × 4.45 mm. The device has a collector-emitter sustaining voltage of 400 V, a continuous collector current rating of 8 A, and a total power dissipation of 80 W at 25°C. It features a thermal resistance junction-to-case of 1.25°C/W and an operating junction temperature range of -65°C to +150°C. The transistor is RoHS compliant and lead-free. It is complementary to the MJE13007 series and meets AEC-Q200 qualification.