Bipolar (BJT) Transistor PNP 350V 1A 10MHz 40W Through Hole TO-220
TRANS PNP 350V 1A TO220
PNP Power Transistor 350V 1A 50W TO220
PNP Power Transistor 350V 1A 50W TO220
PNP BJT, 350V, 1A, 40W, TO-220 Product overview: MJE5731G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 1A, 40W, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 350V, 1A, 40W, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE5731G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 927194-MJE5731G
Operating Temperature Range: -65°C ~ 150°C (TJ)
Features: Bipolar (BJT) Transistor PNP 350 V 1 A 10MHz 40 W Through Hole TO-220
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: MJE5731
Categories: Discrete Semiconductor Products
Case / Package: TO-220
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 42 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: MJE5731G-ND, MJE5731GOS
TRANSISTOR, PNP, -350V, 40W, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-350V; Transition Frequency ft:10MHz; Power Dissipation Pd:40W; DC Collector Current:-1A; DC Current Gain hFE:10hFE; Transistor Case RoHS Compliant: Yes
TRANS PNP 350V 1A TO220
Bipolar Transistors - BJT 1A 350V 40W PNP
| DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | MJE5731GOS-ND | MJE5731G | 7905371 | 276-MJE5731G | 927194-MJE5731G | 97Y9394 | MJE5731G | MJE5731G |
| Product Name | Single Bipolar Transistors | Single Bipolar Transistors | Bipolar Transistors | 350V 1A 40W TO-220 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - MJE5731G | Transistor, Pnp, -350V, 40W, To-220; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT |
| Polarity | PNP | PNP; PNP | PNP | PNP | PNP | PNP | ||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; To-220 | TO-220; SOT3; TO-220 | TO-3; TO-220 | |||
| IC(max) | 1000 milliamps | 1000 milliamps | 1000 milliamps | |||||
| VCEO | 350 volts | 60 volts | 350 volts | |||||
| Operating Frequency | 10 MHz |
