onsemi TRANSISTORS - Transistors (BJT) - Single - MJE5731A MJE5731A

The MJE5731A is a high voltage PNP silicon power transistor designed for applications such as line operated audio output amplifiers and switch-mode power supply drivers. It comes in a TO-220 plastic package, which is popular for its ease of mounting and thermal performance. The transistor has a maximum collector-emitter voltage of 375 V and can handle continuous collector currents up to 1 A, with a peak collector current of 3 A. It features a total device dissipation of 40 W at a case temperature of 25¬8C, with a thermal resistance of 3.125¬8C/W from junction to case. The MJE5731A is RoHS compliant and Pb-free, making it suitable for environmentally conscious designs. It operates within a temperature range of -65¬8C to +150¬8C, providing versatility in various operating conditions. The device also exhibits a DC current gain of up to 150 and a current gain-bandwidth product of 10 MHz, indicating its capability for high-frequency applications. This transistor is a suitable choice for engineers looking for reliable performance in high voltage and power applications.