The MJE5731A is a high voltage PNP silicon power transistor designed for applications such as line operated audio output amplifiers and switch-mode power supply drivers. It comes in a TO-220 plastic package, which is popular for its ease of mounting and thermal performance. The transistor has a maximum collector-emitter voltage of 375 V and can handle continuous collector currents up to 1 A, with a peak collector current of 3 A. It features a total device dissipation of 40 W at a case temperature of 25¬8C, with a thermal resistance of 3.125¬8C/W from junction to case. The MJE5731A is RoHS compliant and Pb-free, making it suitable for environmentally conscious designs. It operates within a temperature range of -65¬8C to +150¬8C, providing versatility in various operating conditions. The device also exhibits a DC current gain of up to 150 and a current gain-bandwidth product of 10 MHz, indicating its capability for high-frequency applications. This transistor is a suitable choice for engineers looking for reliable performance in high voltage and power applications.
Bipolar (BJT) Transistor PNP 375V 1A 10MHz 40W Through Hole TO-220
PNP BJT Power Transistor, 375V, 1A, 40W, TO-220 Product overview: MJE5731A from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 375V, 1A, 40W, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 375V, 1A, 40W, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE5731A can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 927193-MJE5731A
Operating Temperature Range: -65°C ~ 150°C (TJ)
Features: Bipolar (BJT) Transistor PNP 375 V 1 A 10MHz 40 W Through Hole TO-220AB
Package: Tube
Package: TO-220-3
Mounting: Through Hole
Part Status: Obsolete
Family Name: MJE57
Categories: Discrete Semiconductor Products
Case / Package: TO-220AB
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
TRANS PNP 375V 1A TO220
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | MJE5731AOS-ND | 276-MJE5731A | 927193-MJE5731A | MJE5731A |
| Product Name | Single Bipolar Transistors | 375V 1A 40W TO-220 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - MJE5731A | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | PNP | PNP | PNP | |
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | ||
| IC(max) | 1000 milliamps | 1000 milliamps | ||
| VCEO | 375 volts | 375 volts | ||
| VCBO | 350 volts |
