1.0 A, 300 V PNP Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: MJE5730G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.0 A, 300 V, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 1.0 A, 300 V, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE5730G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP 300V 1A 10MHz 40W Through Hole TO-220
Manufacturer: ON Semiconductor
Win Source Part Number: 1223735-MJE5730G
Packaging: Tube
Mounting Style: Through Hole
Transistor Type: PNP
Frequency - Transition: 10MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 300V
Current - Collector Cutoff (Maximum): 1mA
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1V at 200mA, 1A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 300mA, 10V
Maximum Power: 40W
Bipolar Transistors - BJT 1A 300V 40W PNP
TRANS PNP 300V 1A TO220
BIPOLAR TRANSISTOR, PNP, -300V, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; DC Collector Current:1A; Power Dissipation Pd:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
TRANSISTOR, PNP, -300V, -1A, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:10MHz; Power Dissipation Pd:40W; DC Collector Current:-1A; DC Current Gain hFE:10hFE; Transistor Case RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | 276-MJE5730G | MJE5730GOS-ND | 1867412 | 1867976P | 1223735-MJE5730G | MJE5730G | MJE5730G | 26K4466 | 50AC6112 |
| Product Name | 1.0 A 300 V TO-220 Bipolar Transistor | Single Bipolar Transistors | Bipolar Transistors | Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - MJE5730G | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Pnp, -300V, To-220; Transistor Polarity Onsemi | Transistor, Pnp, -300V, -1A, To-220; Transistor Polarity Onsemi |
| Polarity | PNP | PNP | PNP | PNP | PNP | ||||
| Package Type | TO-220; TO-220-3 | TO-220; To-220 | TO-220; TO-220 | TO-220; SOT3 | TO-3; TO-220 | TO-3; TO-220 | |||
| Number of units in IC | 1 | ||||||||
| Packing Method | Tube; Tube | Tube; Tube | |||||||
| TJ | -65 to 150 C (-85 to 302 F) |
