onsemi Single Bipolar Transistors MJE521

The MJE521 is an NPN silicon transistor for general-purpose amplifier and switching circuits, used in 5 to 10 W audio amplifiers. It is packaged in a TO-225 case, measuring 10.60 to 11.10 mm in length and 7.40 to 7.80 mm in width, with a collector tab thickness of 2.40 to 3.00 mm. The device has a 40 V collector-emitter voltage rating, 4.0 A continuous collector current, and 40 W total power dissipation at 25°C case temperature. Thermal resistance from junction to case is 3.12°C/W. DC current gain is a minimum of 40 at 1.0 A collector current. Operating and storage junction temperatures range from -65°C to +150°C. The package is available in Pb-free variants and meets AEC-Q200 standards.