onsemi Single Bipolar Transistors MJE4353

Description
Bipolar (BJT) Transistor PNP 160V 16A 1MHz 125W Through Hole SOT-93
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Description
Bipolar (BJT) Transistor PNP 160V 16A 1MHz 125W Through Hole SOT-93
Request a Quote
Datasheet
Datasheet Summary
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MJE4353 is a PNP silicon bipolar transistor designed for high power audio amplifier and high voltage switching regulator applications. It is packaged in a TO-247 case, measuring 31.00 mm in length, and features a collector-emitter voltage rating of 160 Vdc, continuous collector current of 16 A, and maximum power dissipation of 125 W at 25 °C junction temperature. The device has a thermal resistance of 1.0 °C/W from junction to case, a minimum DC current gain of 8.0 at 16 A collector current, and a maximum collector-emitter saturation voltage of 3.5 V at 16 A collector current and 2.0 A base current. It is Pb-free and meets RoHS requirements.

Datasheet Summary
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MJE4353 is a PNP silicon bipolar transistor designed for high power audio amplifier and high voltage switching regulator applications. It is packaged in a TO-247 case, measuring 31.00 mm in length, and features a collector-emitter voltage rating of 160 Vdc, continuous collector current of 16 A, and maximum power dissipation of 125 W at 25 °C junction temperature. The device has a thermal resistance of 1.0 °C/W from junction to case, a minimum DC current gain of 8.0 at 16 A collector current, and a maximum collector-emitter saturation voltage of 3.5 V at 16 A collector current and 2.0 A base current. It is Pb-free and meets RoHS requirements.

Suppliers

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Supplier Links
Single Bipolar Transistors - MJE4353OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE4353OS-ND
Single Bipolar Transistors MJE4353OS-ND
Bipolar (BJT) Transistor PNP 160V 16A 1MHz 125W Through Hole SOT-93

Bipolar (BJT) Transistor PNP 160V 16A 1MHz 125W Through Hole SOT-93

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number MJE4353OS-ND
Product Name Single Bipolar Transistors
Polarity PNP
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