onsemi Single Bipolar Transistors MJE3055TTU

Bipolar (BJT) Transistor NPN 60V 10A 2MHz 75W Through Hole TO-220-3

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 023376-MJE3055TTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 2MHz
Transistor Polarity: NPN
Family Name: MJE3055T
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 8V @ 3.3A, 10A
Collector Cut-off Current(Max): 700μA
Typical Gain (hFE) (Min): 20 @ 4A, 4V
Maximum Power Dissipation: 75W
Alternative Parts (Cross-Reference): MJE3055T Lead Free; MJE3055T; MJE3055T;
Introduction Date: February 12, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

NPN BJT Transistor, 60V, 10A, 75W, TO-220 Product overview: MJE3055TTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10A, 75W, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 10A, 75W, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE3055TTU can be used for catalog matching and distributor lookup.