onsemi Single Bipolar Transistors MJE2955T

The MJE2955T is a PNP silicon power transistor designed for general-purpose amplifier and switching applications. It features a TO-220 package with dimensions of 10.10 x 15.12 x 4.45 mm and is rated for a maximum collector-emitter voltage of 60 Vdc, collector current of 10 Adc, and total device dissipation of 75 W at 25 °C case temperature. Thermal resistance junction-to-case is 1.67 °C/W. The device meets RoHS compliance and is marked with a Pb-free designation. It operates within a junction and storage temperature range of -55 to +150 °C. Current gain ranges from 5.0 to 100 depending on bias conditions, and it has a current-gain-bandwidth product of at least 2.0 MHz.