Bipolar (BJT) Transistor PNP - Darlington 100V 2A 6MHz 1.5W Through Hole TO-126
Manufacturer: ON Semiconductor
Win Source Part Number: 208448-MJE271G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 6MHz
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 3V @ 1.2mA, 120mA
Collector Cut-off Current(Max): 1mA
Typical Gain (hFE) (Min): 1500 @ 120mA, 10V
Maximum Power Dissipation: 1.5W
TRANS PNP DARL 100V 2A TO126
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | MJE271GOS-ND | 208448-MJE271G | MJE271G |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - MJE271G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | PNP | PNP; PNP - Darlington |
