onsemi 100V 2A Bipolar Transistor MJE271G

Description
PNP Darlington BJT, 100V, 2A, TO-225 Power Transistor Product overview: MJE271G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE271G can be used for catalog matching and distributor lookup.
  • Single Bipolar Transistors - MJE271GOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MJE271G - 208448-MJE271G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE271G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
PNP Darlington BJT, 100V, 2A, TO-225 Power Transistor Product overview: MJE271G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE271G can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
100V 2A Bipolar Transistor
276-MJE271G
100V 2A Bipolar Transistor 276-MJE271G
PNP Darlington BJT, 100V, 2A, TO-225 Power Transistor Product overview: MJE271G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE271G can be used for catalog matching and distributor lookup.

PNP Darlington BJT, 100V, 2A, TO-225 Power Transistor Product overview: MJE271G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE271G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - MJE271GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE271GOS-ND
Single Bipolar Transistors MJE271GOS-ND
Bipolar (BJT) Transistor PNP - Darlington 100V 2A 6MHz 1.5W Through Hole TO-126

Bipolar (BJT) Transistor PNP - Darlington 100V 2A 6MHz 1.5W Through Hole TO-126

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJE271G - 208448-MJE271G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE271G
208448-MJE271G
TRANSISTORS - Transistors (BJT) - Single - MJE271G 208448-MJE271G
Manufacturer: ON Semiconductor Win Source Part Number: 208448-MJE271G Packaging: Bulk Mounting: Through Hole Frequency - Transition: 6MHz Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 1.2mA, 120mA Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 1500 @ 120mA, 10V Maximum Power Dissipation: 1.5W

Manufacturer: ON Semiconductor
Win Source Part Number: 208448-MJE271G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 6MHz
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 3V @ 1.2mA, 120mA
Collector Cut-off Current(Max): 1mA
Typical Gain (hFE) (Min): 1500 @ 120mA, 10V
Maximum Power Dissipation: 1.5W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE271G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE271G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE271G
TRANS PNP DARL 100V 2A TO126

TRANS PNP DARL 100V 2A TO126

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 276-MJE271G MJE271GOS-ND 208448-MJE271G MJE271G
Product Name 100V 2A Bipolar Transistor Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJE271G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP - Darlington
IC(max) 2000 milliamps 2000 milliamps
VCEO 30 volts 100 volts
VCBO 100 volts
fT 6 MHz
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