onsemi TRANSISTORS - Transistors (BJT) - Single - MJE271G MJE271G

Manufacturer: ON Semiconductor
Win Source Part Number: 208448-MJE271G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 6MHz
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 3V @ 1.2mA, 120mA
Collector Cut-off Current(Max): 1mA
Typical Gain (hFE) (Min): 1500 @ 120mA, 10V
Maximum Power Dissipation: 1.5W

PNP Darlington BJT, 100V, 2A, TO-225 Power Transistor Product overview: MJE271G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE271G can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor PNP - Darlington 100V 2A 6MHz 1.5W Through Hole TO-126