onsemi Single Bipolar Transistors MJE271

Description
Bipolar (BJT) Transistor PNP - Darlington 100V 2A 6MHz 1.5W Through Hole TO-126
  • Single Bipolar Transistors - MJE271-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MJE271 - 131275-MJE271 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE271 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor PNP - Darlington 100V 2A 6MHz 1.5W Through Hole TO-126
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - MJE271-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE271-ND
Single Bipolar Transistors MJE271-ND
Bipolar (BJT) Transistor PNP - Darlington 100V 2A 6MHz 1.5W Through Hole TO-126

Bipolar (BJT) Transistor PNP - Darlington 100V 2A 6MHz 1.5W Through Hole TO-126

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJE271 - 131275-MJE271 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE271
131275-MJE271
TRANSISTORS - Transistors (BJT) - Single - MJE271 131275-MJE271
Manufacturer: ON Semiconductor Win Source Part Number: 131275-MJE271 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 6MHz Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 1.2mA, 120mA Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 1500 @ 120mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 131275-MJE271
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 6MHz
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 3V @ 1.2mA, 120mA
Collector Cut-off Current(Max): 1mA
Typical Gain (hFE) (Min): 1500 @ 120mA, 10V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE271 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE271
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE271
TRANS PNP DARL 100V 2A TO126

TRANS PNP DARL 100V 2A TO126

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number MJE271-ND 131275-MJE271 MJE271
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJE271 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP - Darlington
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