onsemi TRANSISTORS - Transistors (BJT) - Single - MJE210G MJE210G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 084086-MJE210G Packaging: Bulk Mounting: Through Hole Frequency - Transition: 65MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1.8V @ 1A, 5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 45 @ 2A, 1V Maximum Power Dissipation: 15W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Audio, Power Management
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 084086-MJE210G Packaging: Bulk Mounting: Through Hole Frequency - Transition: 65MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1.8V @ 1A, 5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 45 @ 2A, 1V Maximum Power Dissipation: 15W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Audio, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJE210G - 084086-MJE210G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE210G
084086-MJE210G
TRANSISTORS - Transistors (BJT) - Single - MJE210G 084086-MJE210G
Manufacturer: ON Semiconductor Win Source Part Number: 084086-MJE210G Packaging: Bulk Mounting: Through Hole Frequency - Transition: 65MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1.8V @ 1A, 5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 45 @ 2A, 1V Maximum Power Dissipation: 15W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Audio, Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 084086-MJE210G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 65MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 1.8V @ 1A, 5A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 45 @ 2A, 1V
Maximum Power Dissipation: 15W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Audio, Power Management

Buy Now Datasheet
Single Bipolar Transistors - MJE210G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJE210G
Single Bipolar Transistors MJE210G
TRANS PNP 40V 5A TO126

TRANS PNP 40V 5A TO126

Supplier's Site Datasheet
Single Bipolar Transistors - MJE210GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE210GOS-ND
Single Bipolar Transistors MJE210GOS-ND
Bipolar (BJT) Transistor PNP 40V 5A 65MHz 15W Through Hole TO-126

Bipolar (BJT) Transistor PNP 40V 5A 65MHz 15W Through Hole TO-126

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE210G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE210G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE210G
TRANS PNP 40V 5A TO126

TRANS PNP 40V 5A TO126

Supplier's Site
ON SEMICONDUCTOR MJE210G. RF TRANSISTOR, PNP, -25V, 65MHZ, TO-225 - 598-MJE210G - Utmel Electronic Limited
Hong Kong, China
ON SEMICONDUCTOR MJE210G. RF TRANSISTOR, PNP, -25V, 65MHZ, TO-225
598-MJE210G
ON SEMICONDUCTOR MJE210G. RF TRANSISTOR, PNP, -25V, 65MHZ, TO-225 598-MJE210G
ON SEMICONDUCTOR MJE210G. RF TRANSISTOR, PNP, -25V, 65MHZ, TO-225

ON SEMICONDUCTOR MJE210G. RF TRANSISTOR, PNP, -25V, 65MHZ, TO-225

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJE210G
Bipolar Transistors - BJT MJE210G
Bipolar Transistors - BJT 5A 25V 15W PNP

Bipolar Transistors - BJT 5A 25V 15W PNP

Buy Now Datasheet
Rf Transistor, Pnp, -25V, 65Mhz, To-225; Transistor Polarity Onsemi - 45J1501 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor, Pnp, -25V, 65Mhz, To-225; Transistor Polarity Onsemi
45J1501
Rf Transistor, Pnp, -25V, 65Mhz, To-225; Transistor Polarity Onsemi 45J1501
RF TRANSISTOR, PNP, -25V, 65MHZ, TO-225; Transistor Polarity:PNP; Collector Emitter Voltage Max:25V; Continuous Collector Current:5A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

RF TRANSISTOR, PNP, -25V, 65MHZ, TO-225; Transistor Polarity:PNP; Collector Emitter Voltage Max:25V; Continuous Collector Current:5A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

Supplier's Site
Transistor, Bipol, Pnp, 40V, To-225-3; Transistor Polarity Onsemi - 82Y6994 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipol, Pnp, 40V, To-225-3; Transistor Polarity Onsemi
82Y6994
Transistor, Bipol, Pnp, 40V, To-225-3; Transistor Polarity Onsemi 82Y6994
TRANSISTOR, BIPOL, PNP, 40V, TO-225-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:65MHz; Power Dissipation Pd:15W; DC Collector Current:-5A; DC Current Gain hFE:10hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, BIPOL, PNP, 40V, TO-225-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:65MHz; Power Dissipation Pd:15W; DC Collector Current:-5A; DC Current Gain hFE:10hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors RF Transistors Transistors
Product Number 084086-MJE210G MJE210G MJE210GOS-ND MJE210G 598-MJE210G MJE210G 45J1501 82Y6994
Product Name TRANSISTORS - Transistors (BJT) - Single - MJE210G Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) ON SEMICONDUCTOR MJE210G. RF TRANSISTOR, PNP, -25V, 65MHZ, TO-225 Bipolar Transistors - BJT Rf Transistor, Pnp, -25V, 65Mhz, To-225; Transistor Polarity Onsemi Transistor, Bipol, Pnp, 40V, To-225-3; Transistor Polarity Onsemi
Polarity PNP; PNP PNP; PNP PNP PNP; PNP PNP PNP
Package Type SOT3; TO-225AA TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-3 TO-3
IC(max) 5000 milliamps 5000 milliamps
VCEO 40 volts 40 volts
Operating Frequency 65 MHz
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