onsemi Single Bipolar Transistors MJE181G

Description
Bipolar (BJT) Transistor NPN 60V 3A 50MHz 1.5W Through Hole TO-126
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 60V 3A 50MHz 1.5W Through Hole TO-126
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MJE181GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE181GOS-ND
Single Bipolar Transistors MJE181GOS-ND
Bipolar (BJT) Transistor NPN 60V 3A 50MHz 1.5W Through Hole TO-126

Bipolar (BJT) Transistor NPN 60V 3A 50MHz 1.5W Through Hole TO-126

Buy Now Datasheet
Singapore
60V 3A 50MHz Bipolar Transistor
276-MJE181G
60V 3A 50MHz Bipolar Transistor 276-MJE181G
NPN BJT Power Transistor, 60V, 3A, 50MHz, TO-225 Product overview: MJE181G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A, 50MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, 50MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE181G can be used for catalog matching and distributor lookup.

NPN BJT Power Transistor, 60V, 3A, 50MHz, TO-225 Product overview: MJE181G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A, 50MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, 50MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE181G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJE181G - 058930-MJE181G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE181G
058930-MJE181G
TRANSISTORS - Transistors (BJT) - Single - MJE181G 058930-MJE181G
Manufacturer: ON Semiconductor Win Source Part Number: 058930-MJE181G Packaging: Bulk Mounting: Through Hole Frequency - Transition: 50MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 1.7V @ 600mA, 3A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 50 @ 100mA, 1V Maximum Power Dissipation: 1.5W

Manufacturer: ON Semiconductor
Win Source Part Number: 058930-MJE181G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 50MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 1.7V @ 600mA, 3A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 50 @ 100mA, 1V
Maximum Power Dissipation: 1.5W

Buy Now Datasheet
Power Transistor, Npn, 60V, To-225; Transistor Polarity Onsemi - 26K4457 - Newark, An Avnet Company
Chicago, IL, United States
Power Transistor, Npn, 60V, To-225; Transistor Polarity Onsemi
26K4457
Power Transistor, Npn, 60V, To-225; Transistor Polarity Onsemi 26K4457
POWER TRANSISTOR, NPN, 60V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:3A; Power Dissipation:1.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:50MHz RoHS Compliant: Yes

POWER TRANSISTOR, NPN, 60V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:3A; Power Dissipation:1.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:50MHz RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJE181G
Bipolar Transistors - BJT MJE181G
Bipolar Transistors - BJT 3A 60V 12.5W NPN

Bipolar Transistors - BJT 3A 60V 12.5W NPN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE181G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE181G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE181G
TRANS NPN 60V 3A TO126

TRANS NPN 60V 3A TO126

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MJE181GOS-ND 276-MJE181G 058930-MJE181G 26K4457 MJE181G MJE181G
Product Name Single Bipolar Transistors 60V 3A 50MHz Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - MJE181G Power Transistor, Npn, 60V, To-225; Transistor Polarity Onsemi Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN NPN
Package Type TO-225AA, TO-126-3 SOT3; TO-225AA TO-3
IC(max) 3000 milliamps 3000 milliamps
VCEO 60 volts 60 volts
VCBO 80 volts
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